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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
Exar Corporation
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Honeywell Aerospace
Infineon Technologies
Intersil (Renesas Electronics America)
IXYS Corporation
IXYS Integrated Circuits Division
IXYS RF/Littelfuse
Littelfuse
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vicor
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
2SK2883(TE24L,Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 800V 3A TO220SM устарелыйN-ChannelMOSFET (Metal Oxide)800V3A (Ta)10V3.6 Ohm @ 1.5A, 10V4V @ 1mA25nC @ 10V±30V750pF @ 25V
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75W (Tc)150°C (TJ)SMD Поверхностный монтажTO-220SMTO-252-3, DPak (2 Leads + Tab), SC-63
2SK3313(Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 12A TO220NIS устарелыйN-ChannelMOSFET (Metal Oxide)500V12A (Ta)10V620 mOhm @ 6A, 10V4V @ 1mA45nC @ 10V±30V2040pF @ 10V
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40W (Tc)150°C (TJ)Through HoleTO-220NISTO-220-3 Full Pack
2SK3342(TE16L1,NQ)
 Toshiba Semiconductor and Storage MOSFET N-CH 250V 4.5A PW-MOLD устарелыйN-ChannelMOSFET (Metal Oxide)250V4.5A (Ta)10V1 Ohm @ 2.5A, 10V3.5V @ 1mA10nC @ 10V±20V440pF @ 10V
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20W (Tc)150°C (TJ)SMD Поверхностный монтажPW-MOLDTO-252-3, DPak (2 Leads + Tab), SC-63
2SK3388(TE24L,Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A SC-97 устарелыйN-ChannelMOSFET (Metal Oxide)250V20A (Ta)10V105 mOhm @ 10A, 10V3.5V @ 1mA100nC @ 10V±20V4000pF @ 10V
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125W (Tc)150°C (TJ)SMD Поверхностный монтаж4-TFP (9.2x9.2)SC-97
2SK3403(Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 450V 13A TO220FL устарелыйN-ChannelMOSFET (Metal Oxide)450V13A (Ta)10V400 mOhm @ 6A, 10V5V @ 1mA34nC @ 10V±30V1600pF @ 25V
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100W (Tc)150°C (TJ)Through HoleTO-220FLTO-220-3, Short Tab
2SK3462(TE16L1,NQ)
 Toshiba Semiconductor and Storage MOSFET N-CH 250V 3A PW-MOLD устарелыйN-ChannelMOSFET (Metal Oxide)250V3A (Ta)10V1.7 Ohm @ 1.5A, 10V3.5V @ 1mA12nC @ 10V±20V267pF @ 10V
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20W (Tc)150°C (TJ)SMD Поверхностный монтажPW-MOLDTO-252-3, DPak (2 Leads + Tab), SC-63
2SK3466(TE24L,Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A SC-97 устарелыйN-ChannelMOSFET (Metal Oxide)500V5A (Ta)10V1.5 Ohm @ 5A, 10V4V @ 1mA17nC @ 10V±30V780pF @ 10V
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50W (Tc)150°C (TJ)SMD Поверхностный монтаж4-TFP (9.2x9.2)SC-97
2SK3662(F)
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 35A TO220NIS устарелыйN-ChannelMOSFET (Metal Oxide)60V35A (Ta)4V, 10V12.5 mOhm @ 18A, 10V2.5V @ 1mA91nC @ 10V±20V5120pF @ 10V
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35W (Tc)150°C (TJ)Through HoleTO-220NISTO-220-3 Full Pack
2SK3844(Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 45A TO220NIS устарелыйN-ChannelMOSFET (Metal Oxide)60V45A (Ta)10V5.8 mOhm @ 23A, 10V4V @ 1mA196nC @ 10V±20V12400pF @ 10V
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45W (Tc)150°C (TJ)Through HoleTO-220NISTO-220-3 Full Pack
2SK3868(Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A TO220SIS устарелыйN-ChannelMOSFET (Metal Oxide)500V5A (Ta)10V1.7 Ohm @ 2.5A, 10V4V @ 1mA16nC @ 10V±30V550pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
2SK3906(Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-3PN устарелыйN-ChannelMOSFET (Metal Oxide)600V20A (Ta)10V330 mOhm @ 10A, 10V4V @ 1mA60nC @ 10V±30V4250pF @ 25V
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150W (Tc)150°C (TJ)Through HoleTO-3P(N)TO-3P-3, SC-65-3
2SK4016(Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 13A TO220SIS устарелыйN-ChannelMOSFET (Metal Oxide)600V13A (Ta)10V500 mOhm @ 6.5A, 10V4V @ 1mA62nC @ 10V±30V3100pF @ 25V
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50W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
2SK4017(Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 5A PW-MOLD2 в производствеN-ChannelMOSFET (Metal Oxide)60V5A (Ta)4V, 10V100 mOhm @ 2.5A, 10V2.5V @ 1mA15nC @ 10V±20V730pF @ 10V
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20W (Tc)150°C (TJ)Through HolePW-MOLD2TO-251-3 Stub Leads, IPak
2SK4021(Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 250V 4.5A PW-MOLD2 устарелыйN-ChannelMOSFET (Metal Oxide)250V4.5A (Ta)10V1 Ohm @ 2.5A, 10V3.5V @ 1mA10nC @ 10V±20V440pF @ 10V
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20W (Tc)150°C (TJ)Through HolePW-MOLD2TO-251-3 Stub Leads, IPak
TPC8026(TE12L,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 13A 8-SOIC устарелыйN-ChannelMOSFET (Metal Oxide)30V13A (Ta)4.5V, 10V6.6 mOhm @ 6.5A, 10V2.5V @ 1mA42nC @ 10V±20V1800pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP (5.5x6.0)8-SOIC (0.173", 4.40mm Width)
TPC8036-H(TE12L,QM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 18A 8-SOIC устарелыйN-ChannelMOSFET (Metal Oxide)30V18A (Ta)4.5V, 10V4.5 mOhm @ 9A, 10V2.3V @ 1mA49nC @ 10V±20V4600pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP (5.5x6.0)8-SOIC (0.173", 4.40mm Width)
TPCA8025(TE12L,Q,M
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 40A 8SOIC ADV устарелыйN-ChannelMOSFET (Metal Oxide)30V40A (Ta)4.5V, 10V3.5 mOhm @ 20A, 10V2.5V @ 1mA49nC @ 10V±20V2200pF @ 10V
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1.6W (Ta), 45W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPCA8036-H(TE12L,Q
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 38A 8SOIC ADV устарелыйN-ChannelMOSFET (Metal Oxide)30V38A (Ta)4.5V, 10V4.2 mOhm @ 19A, 10V2.3V @ 500µA50nC @ 10V±20V4600pF @ 10V
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1.6W (Ta), 45W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPCA8A02-H(TE12LQM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 34A 8SOP ADV устарелыйN-ChannelMOSFET (Metal Oxide)30V34A (Ta)4.5V, 10V5.3 mOhm @ 17A, 10V2.3V @ 1mA36nC @ 10V±20V3430pF @ 10V
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1.6W (Ta), 45W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPCA8A04-H(TE12L,Q
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 44A 8SOP ADV устарелыйN-ChannelMOSFET (Metal Oxide)30V44A (Ta)4.5V, 10V3.2 mOhm @ 22A, 10V2.3V @ 1mA59nC @ 10V±20V5700pF @ 10V
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150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPCP8003-H(TE85L,F
 Toshiba Semiconductor and Storage MOSFET N-CH 100V 2.2A PS-8 устарелыйN-ChannelMOSFET (Metal Oxide)100V2.2A (Ta)4.5V, 10V180 mOhm @ 1.1A, 10V2.3V @ 1mA7.5nC @ 10V±20V360pF @ 10V
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840mW (Ta)150°C (TJ)SMD Поверхностный монтажPS-8 (2.9x2.4)8-SMD, Flat Lead
TPC8042(TE12L,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 18A 8-SOP устарелыйN-ChannelMOSFET (Metal Oxide)30V18A (Ta)4.5V, 10V3.4 mOhm @ 9A, 10V2.5V @ 1mA56nC @ 10V±20V2900pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP (5.5x6.0)8-SOIC (0.173", 4.40mm Width)
TPC8051-H(TE12L,Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 80V 13A 8-SOP Discontinued at -N-ChannelMOSFET (Metal Oxide)80V13A (Ta)4.5V, 10V9.7 mOhm @ 6.5A, 10V2.3V @ 1mA85nC @ 10V±20V7540pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP (5.5x6.0)8-SOIC (0.173", 4.40mm Width)
TPCA8048-H(TE12L,Q
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 35A 8-SOP ADV Discontinued at -N-ChannelMOSFET (Metal Oxide)60V35A (Ta)4.5V, 10V6.6 mOhm @ 18A, 10V2.3V @ 1mA90nC @ 10V±20V7540pF @ 10V
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1.6W (Ta), 45W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPCP8005-H(TE85L,F
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 11A PS-8 устарелыйN-ChannelMOSFET (Metal Oxide)30V11A (Ta)4.5V, 10V12.9 mOhm @ 5.5A, 10V2.5V @ 1mA20nC @ 10V±20V2150pF @ 10V
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840mW (Ta)150°C (TJ)SMD Поверхностный монтажPS-8 (2.9x2.4)8-SMD, Flat Lead
TPC8035-H(TE12L,QM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 18A SOP8 2-6J1B устарелыйN-ChannelMOSFET (Metal Oxide)30V18A (Ta)4.5V, 10V3.2 mOhm @ 9A, 10V2.3V @ 1mA82nC @ 10V±20V7800pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж8-SOP (5.5x6.0)8-SOIC (0.173", 4.40mm Width)
SSM3J129TU(TE85L)
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 4.6A UFM устарелыйP-ChannelMOSFET (Metal Oxide)20V4.6A (Ta)1.5V, 4.5V46 mOhm @ 3A, 4.5V1V @ 1mA8.1nC @ 4.5V±8V640pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажUFM3-SMD, Flat Leads
SSM3J307T(TE85L,F)
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A TSM устарелыйP-ChannelMOSFET (Metal Oxide)20V5A (Ta)1.5V, 4.5V31 mOhm @ 4A, 4.5V1V @ 1mA19nC @ 4.5V±8V1170pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
SSM3J321T(TE85L,F)
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 5.2A TSM устарелыйP-ChannelMOSFET (Metal Oxide)20V5.2A (Ta)1.5V, 4.5V46 mOhm @ 3A, 4.5V1V @ 1mA8.1nC @ 4.5V±8V640pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
SSM3K315T(TE85L,F)
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 6A TSM устарелыйN-ChannelMOSFET (Metal Oxide)30V6A (Ta)4.5V, 10V27.6 mOhm @ 4A, 10V2.5V @ 1mA10.1nC @ 10V±20V450pF @ 15V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
SSM3K316T(TE85L,F)
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 4A TSM устарелыйN-ChannelMOSFET (Metal Oxide)30V4A (Ta)1.8V, 10V53 mOhm @ 3A, 10V1V @ 1mA4.3nC @ 4V±12V270pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
SSM3K7002BSU,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 60V .2A USM Discontinued at -N-ChannelMOSFET (Metal Oxide)60V200mA (Ta)4.5V, 10V2.1 Ohm @ 500mA, 10V3.1V @ 250µA
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±20V17pF @ 25V
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150mW (Ta)150°C (TJ)SMD Поверхностный монтажUSMSC-70, SOT-323
SSM4K27CTTPL3
 Toshiba Semiconductor and Storage MOSFET N-CH 20V .5A CST4 устарелыйN-ChannelMOSFET (Metal Oxide)20V500mA (Ta)1.8V, 4V205 mOhm @ 250mA, 4V1.1V @ 1mA
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±12V174pF @ 10V
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400mW (Ta)150°C (TJ)SMD Поверхностный монтажCST4 (1.2x0.8)4-SMD, No Lead
SSM5H12TU(TE85L,F)
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 1.9A UFV устарелыйN-ChannelMOSFET (Metal Oxide)30V1.9A (Ta)1.8V, 4V133 mOhm @ 1A, 4V1V @ 1mA1.9nC @ 4V±12V123pF @ 15VSchottky Diode (Isolated)500mW (Ta)150°C (TJ)SMD Поверхностный монтажUFV6-SMD (5 Leads), Flat Lead
SSM6J409TU(TE85L,F
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 9.5A UF6 устарелыйP-ChannelMOSFET (Metal Oxide)20V9.5A (Ta)1.5V, 4.5V22.1 mOhm @ 3A, 4.5V1V @ 1mA15nC @ 4.5V±8V1100pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажUF66-SMD, Flat Leads
SSM6J51TUTE85LF
 Toshiba Semiconductor and Storage MOSFET P-CH 12V 4A UF6 Discontinued at -P-ChannelMOSFET (Metal Oxide)12V4A (Ta)1.5V, 2.5V54 mOhm @ 2A, 2.5V1V @ 1mA
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±8V1700pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажUF66-SMD, Flat Leads
SSM6J53FE(TE85L,F)
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 1.8A ES6 устарелыйP-ChannelMOSFET (Metal Oxide)20V1.8A (Ta)1.5V, 2.5V136 mOhm @ 1A, 2.5V1V @ 1mA10.6nC @ 4V±8V568pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажES6 (1.6x1.6)SOT-563, SOT-666
TK3A60DA(Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 2.5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)600V2.5A (Ta)10V2.8 Ohm @ 1.3A, 10V4.4V @ 1mA9nC @ 10V±30V380pF @ 25V
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30W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK4A60D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 4A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)600V4A (Ta)10V1.7 Ohm @ 2A, 10V4.4V @ 1mA12nC @ 10V±30V600pF @ 25V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
SSM3K106TU(TE85L)
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 1.2A UFM устарелыйN-ChannelMOSFET (Metal Oxide)20V1.2A (Ta)4V, 10V310 mOhm @ 600mA, 10V2.3V @ 100µA
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±20V36pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажUFM3-SMD, Flat Leads
SSM3K15FS,LF
 Toshiba Semiconductor and Storage MOSFET N-CH SGL 30V 0.1A SSM устарелыйN-ChannelMOSFET (Metal Oxide)30V100mA (Ta)2.5V, 4V4 Ohm @ 10mA, 4V1.5V @ 100µA
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±20V7.8pF @ 3V
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200mW (Ta)150°C (TJ)SMD Поверхностный монтажSSMSC-75, SOT-416
SSM3K303T(TE85L,F)
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 2.9A TSM устарелыйN-ChannelMOSFET (Metal Oxide)30V2.9A (Ta)4V, 10V83 mOhm @ 1.5A, 10V2.6V @ 1mA3.3nC @ 4V±20V180pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
SSM3K35MFV(TPL3)
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.18A VESM в производствеN-ChannelMOSFET (Metal Oxide)20V180mA (Ta)1.2V, 4V3 Ohm @ 50mA, 4V1V @ 1mA
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±10V9.5pF @ 3V
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150mW (Ta)150°C (TJ)SMD Поверхностный монтажVESMSOT-723
TPCC8001-H(TE12LQM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON устарелыйN-ChannelMOSFET (Metal Oxide)30V22A (Ta)4.5V, 10V8.3 mOhm @ 11A, 10V2.5V @ 1mA27nC @ 10V±20V2500pF @ 10V
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700mW (Ta), 30W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPCC8002-H(TE12LQM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON устарелыйN-ChannelMOSFET (Metal Oxide)30V22A (Ta)4.5V, 10V8.3 mOhm @ 11A, 10V2.5V @ 1mA27nC @ 10V±20V2500pF @ 10V
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700mW (Ta), 30W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPCC8003-H(TE12LQM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 13A 8TSON устарелыйN-ChannelMOSFET (Metal Oxide)30V13A (Ta)4.5V, 10V16.9 mOhm @ 6.5A, 10V2.3V @ 200µA17nC @ 10V±20V1300pF @ 10V
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700mW (Ta), 22W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPCC8005-H(TE12LQM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 26A 8TSON устарелыйN-ChannelMOSFET (Metal Oxide)30V26A (Ta)4.5V, 10V6.4 mOhm @ 13A, 10V2.3V @ 500µA35nC @ 10V±20V2900pF @ 10V
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700mW (Ta), 30W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPCC8006-H(TE12LQM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON устарелыйN-ChannelMOSFET (Metal Oxide)30V22A (Ta)4.5V, 10V8 mOhm @ 11A, 10V2.3V @ 200µA27nC @ 10V±20V2200pF @ 10V
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700mW (Ta), 27W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPCC8A01-H(TE12LQM
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 21A SBD 8TSON устарелыйN-ChannelMOSFET (Metal Oxide)30V21A (Ta)4.5V, 10V9.9 mOhm @ 10.5A, 10V2.3V @ 1mA20nC @ 10V±20V1900pF @ 10V
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700mW (Ta), 30W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPCP8004(TE85L,F)
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 8.3A PS-8 устарелыйN-ChannelMOSFET (Metal Oxide)30V8.3A (Ta)4.5V, 10V8.5 mOhm @ 4.2A, 10V2.5V @ 1mA26nC @ 10V±20V1270pF @ 10V
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840mW (Ta)150°C (TJ)SMD Поверхностный монтажPS-8 (2.9x2.4)8-SMD, Flat Lead
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