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Vishay Siliconix |
MOSFET N-CH 100V 120A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.8 mOhm @ 20A, 10V | 3.5V @ 250µA | 190nC @ 10V | ±20V | 7230pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 110A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 9.5 mOhm @ 30A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 6700pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3 Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 3.5 mOhm @ 29A, 10V | 2.5V @ 250µA | 330nC @ 10V | ±20V | 14700pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 90A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 8.2 mOhm @ 20A, 10V | 4.5V @ 250µA | 150nC @ 10V | ±20V | 6290pF @ 50V | - | 3.75W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3 mOhm @ 20A, 10V | 3V @ 250µA | 125nC @ 10V | ±20V | 5600pF @ 15V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4V, 5V | 77 mOhm @ 17A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 65A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 65A (Tc) | 10V | 30 mOhm @ 30A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 5100pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 9.2A TO220AB |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 9.2A (Ta), 53A (Tc) | 4.5V, 10V | 19.5 mOhm @ 30A, 10V | 3V @ 250µA | 115nC @ 10V | ±20V | 3500pF @ 25V | - | 3.1W (Ta), 104.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 63A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 63A (Tc) | 7.5V, 10V | - | 4V @ 250µA | 88nC @ 10V | ±20V | - | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270 mOhm @ 10A, 10V | 5V @ 250µA | 76nC @ 10V | ±30V | 2942pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 9.9A TO220FP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 9.9A (Tc) | 4V, 5V | 180 mOhm @ 5.9A, 5V | 2V @ 250µA | 66nC @ 10V | ±10V | 1800pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 4200pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 105nC @ 10V | ±30V | 3100pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180 mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3600pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 98 mOhm @ 16.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±30V | 3454pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 27A TO-247AC |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 27A (Tc) | 10V | 220 mOhm @ 16A, 10V | 5V @ 250µA | 180nC @ 10V | ±30V | 4660pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 12V 500MA PWRPAK0806 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 500mA (Tc) | 1.2V, 4.5V | 340 mOhm @ 500mA, 4.5V | 900mV @ 250µA | 0.71nC @ 4.5V | ±5V | 21pF @ 6V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerPAK® 0806 | PowerPAK® 0806 |
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Vishay Siliconix |
MOSFET N-CH 30V 2.6A SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 2.6A (Ta) | 4.5V, 10V | 70 mOhm @ 2.5A, 10V | 3V @ 250µA | 4nC @ 5V | ±20V | 225pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CHAN 20V SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta), 5.9A (Tc) | 1.8V, 4.5V | 30 mOhm @ 4A, 4.5V | 1V @ 250µA | 20nC @ 10V | ±8V | 735pF @ 10V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.6A SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 2.6A (Tc) | 4.5V, 10V | 144 mOhm @ 1.9A, 10V | 3V @ 250µA | 4nC @ 10V | ±20V | 105pF @ 30V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 2.1A MICROFOOT |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | - | 1.2V, 4.5V | 75 mOhm @ 1A, 4.5V | 800mV @ 250µA | 6nC @ 4.5V | ±5V | 400pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-Microfoot | 4-XFBGA |
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Vishay Siliconix |
MOSFET N-CH 30V 3.3A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3.3A (Ta), 3.6A (Tc) | 4.5V, 10V | 60 mOhm @ 3.2A, 10V | 2.2V @ 250µA | 6.7nC @ 10V | ±20V | 235pF @ 15V | - | 1.1W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 8V 5.8A SOT23-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 8V | 5.8A (Tc) | 1.8V, 4.5V | 35 mOhm @ 4.4A, 4.5V | 1V @ 250µA | 30nC @ 8V | ±8V | 960pF @ 4V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 2.1A MICROFOOT |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 72 mOhm @ 1A, 4.5V | 900mV @ 250µA | 8nC @ 8V | ±8V | 245pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-Microfoot | 4-XFBGA |
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Vishay Siliconix |
MOSFET N-CHAN 20V SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 2.9A (Tj) | 2.5V, 4.5V | 57 mOhm @ 3.6A, 4.5V | 850mV @ 250µA | 5.5nC @ 4.5V | ±8V | - | - | 710mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 10V | 3 Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | ±20V | 21pF @ 5V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-236 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 115MA SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Ta) | 5V, 10V | 7.5 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-236 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 0.14A SC-75A |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 140mA (Ta) | 1.5V, 4.5V | 8 Ohm @ 150mA, 4.5V | 1.2V @ 250µA | 1.5nC @ 4.5V | ±6V | - | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-75A | SC-75A |
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Vishay Siliconix |
MOSFET P-CH 30V 3.5A SOT23-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Tc) | 4.5V, 10V | 88 mOhm @ 3.5A, 10V | 3V @ 250µA | 6.2nC @ 4.5V | ±20V | 340pF @ 15V | - | 1.1W (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT323-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 3V, 10V | 2.5 Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | ±20V | - | - | 280mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-70-3 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET P-CH 20V 350MA SC89-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 350mA (Ta) | 1.8V, 4.5V | 1.2 Ohm @ 350mA, 4.5V | 450mV @ 250µA (Min) | 1.5nC @ 4.5V | ±6V | - | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-89-3 | SC-89, SOT-490 |
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Vishay Siliconix |
MOSFET N-CH 30V MICRO FOOT |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | - | 2.5V, 10V | 109 mOhm @ 1A, 10V | 1.4V @ 250µA | 8nC @ 10V | ±12V | 195pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-Microfoot | 4-XFBGA |
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Vishay Siliconix |
MOSFET P-CHAN 30V SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Tc) | 4.5V, 10V | 170 mOhm @ 1.8A, 10V | 2.5V @ 250µA | 6.8nC @ 10V | ±20V | 210pF @ 25V | - | 1.9W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-236 (SOT-23) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 3.9A TO236 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3.9A (Tc) | 2.5V, 4.5V | 120 mOhm @ 2.8A, 4.5V | 1.5V @ 250µA | 8nC @ 4.5V | ±8V | 425pF @ 10V | - | 3W (Tc) | -55°C ~ 175°C (TA) | SMD Поверхностный монтаж | TO-236 (SOT-23) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 30V MICROFOOT |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | - | 1.5V, 4.5V | 95 mOhm @ 1A, 4.5V | 900mV @ 250µA | 10nC @ 8V | ±8V | 330pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-Microfoot | 4-UFBGA |
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Vishay Siliconix |
MOSFET P-CH 30V 12A SC70-6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 2.5V, 10V | 20 mOhm @ 6A, 10V | 1.5V @ 250µA | 72nC @ 10V | ±12V | 2140pF @ 15V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET P-CH 12V 12A SC-70-6L |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 12A (Tc) | 1.5V, 4.5V | 13.5 mOhm @ 7A, 4.5V | 850mV @ 250µA | 80nC @ 8V | ±8V | 2880pF @ 6V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 9A SC70 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 9A (Tc) | 2.5V, 4.5V | 35 mOhm @ 5A, 4.5V | 1.2V @ 250µA | 30nC @ 10V | ±12V | 885pF @ 10V | - | 2.9W (Ta), 15.6W (Tc) | -50°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET P-CHAN 20V SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Tc) | 2.5V, 4.5V | 115 mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 5.5nC @ 4.5V | ±12V | 330pF @ 10V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 60A POWERPAK1212 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 3.5 mOhm @ 10A, 10V | 2.4V @ 250µA | 30nC @ 4.5V | +20V, -16V | 3240pF @ 20V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 8V 1.34A SC-89-6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 8V | 1.34A (Ta) | 1.5V, 4.5V | 86 mOhm @ 1.34A, 4.5V | 900mV @ 250µA | 11.6nC @ 5V | ±5V | 585pF @ 4V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-89-6 | SOT-563, SOT-666 |
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Vishay Siliconix |
MOSFET N-CH 100V 6.3A SC75-6L |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 6.3A (Tc) | 4.5V, 10V | 185 mOhm @ 1.9A, 10V | 3V @ 250µA | 5nC @ 10V | ±20V | 130pF @ 50V | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
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Vishay Siliconix |
MOSFET P-CH 20V 6A SOT-23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Tc) | 2.5V, 10V | 34 mOhm @ 5.1A, 10V | 1.5V @ 250µA | 20nC @ 4.5V | ±12V | 835pF @ 10V | - | 1.25W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 2.7A SOT23-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Tc) | 4.5V, 10V | 190 mOhm @ 1.9A, 10V | 3V @ 250µA | 8nC @ 10V | ±20V | 155pF @ 15V | - | 1W (Ta), 2.3W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 8A 6-TSOP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 8A (Tc) | 2.5V, 4.5V | 24 mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 63nC @ 10V | ±12V | 1670pF @ 10V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 4A SOT-363 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Tc) | 1.8V, 4.5V | 41 mOhm @ 5A, 4.5V | 1V @ 250µA | 33nC @ 8V | ±10V | - | - | 1.6W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-363 | 6-TSSOP, SC-88, SOT-363 |
