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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 10V | 270 mOhm @ 5.5A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 540 mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 1A 4-DIP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4V, 5V | 540 mOhm @ 600mA, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 80V 100A POWERPAKSO |
в производстве | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 7.5V, 10V | 2.9 mOhm @ 20A, 10V | 3.4V @ 250µA | 81nC @ 7.5V | ±20V | 5150pF @ 40V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 600MA 4-DIP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 600mA (Ta) | 10V | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A TO-220AB |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600 mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200 mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 1A 4-DIP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 10V | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 3 Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 1.7A 4-DIP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 4V, 5V | 200 mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 1.8 Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO-220AB |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.1A 8-SOIC |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 2.1A (Ta) | 6V, 10V | 155 mOhm @ 3A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 28A 8-SOIC |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Tc) | 4.5V, 10V | 4.2 mOhm @ 20A, 10V | 3V @ 250µA | 100nC @ 10V | ±20V | 3650pF @ 15V | - | 3W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4 Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 14A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 670pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 800MA 4-DIP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 800mA (Ta) | 10V | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 60V 2.5A 4-DIP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4V, 5V | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3 Ohm @ 1.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 270 mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 26A PPAK SO-8 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 150V | 26A (Tc) | 8V, 10V | 45 mOhm @ 5A, 10V | 4.5V @ 250µA | 43nC @ 10V | ±20V | 1735pF @ 50V | - | 5.2W (Ta), 64W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 9A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400 mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 4.5A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5 Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.5A 4-DIP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 10V | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET P-CH 50V 1.1A 4-DIP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 50V | 1.1A (Tc) | 10V | 500 mOhm @ 580mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 240pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A TO-220AB |
в производстве | P-Channel | MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 800 mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4V, 5V | 100 mOhm @ 10A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 4V, 5V | 540 mOhm @ 3.4A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1 Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 700pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 5A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4 Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 620pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 15A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 5V | 160 mOhm @ 9A, 5V | 2V @ 250µA | 28nC @ 5V | ±10V | 930pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 3.5A TO-220AB |
в производстве | P-Channel | MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 1.5 Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 350pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 120A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.7 mOhm @ 30A, 10V | 2.5V @ 250µA | 285nC @ 10V | ±20V | 14606pF @ 20V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 280 mOhm @ 8.4A, 10V | 4V @ 250µA | 68nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 63.5A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 63.5A (Tc) | 7.5V, 10V | 31 mOhm @ 30A, 10V | 4V @ 250µA | 88nC @ 10V | ±20V | 3002pF @ 125V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600 mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 18A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 1.8A TO-220AB |
в производстве | P-Channel | MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 170pF @ 25V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 11A TO-220AB |
в производстве | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 12A TO-220AB |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300 mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 1000V 1.4A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.4A (Tc) | 10V | 11 Ohm @ 840mA, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 500pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 18A TO-220AB |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 140 mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1100pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 4V, 5V | 200 mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 18A D2PAK |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 140 mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1100pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 50 mOhm @ 18A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 19A TO-220AB |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 200 mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 50 mOhm @ 18A, 5V | 2V @ 250µA | 35nC @ 5V | ±10V | 1600pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 1.6A 4-DIP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 10V | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 50V 15A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 100 mOhm @ 10A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 850pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
