|
|
IXYS |
MOSFET N-CH 200V 60A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 60A (Tc) | 10V | 45 mOhm @ 30A, 10V | 4.5V @ 250µA | 255nC @ 10V | ±20V | 10500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 100V 110A TO-268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 18 mOhm @ 55A, 10V | 4.5V @ 250µA | 260nC @ 10V | ±20V | 10500pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
IXYS |
MOSFET N-CH 200V 60A TO268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 60A (Tc) | 10V | 45 mOhm @ 30A, 10V | 4.5V @ 250µA | 255nC @ 10V | ±20V | 10500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
IXYS |
MOSFET N-CH 1000V 10A ISOPLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 10A (Tc) | 10V | 1.2 Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64nC @ 10V | ±30V | 3250pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 300V 150A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 150A (Tc) | 10V | 19 mOhm @ 75A, 10V | 5V @ 8mA | 197nC @ 10V | ±20V | 12100pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 300V 70A TO-268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 70A (Tc) | 10V | 54 mOhm @ 35A, 10V | 6.5V @ 4mA | 98nC @ 10V | ±20V | 4735pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
IXYS |
MOSFET N-CH 300V 150A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 150A (Tc) | 10V | 19 mOhm @ 75A, 10V | 5V @ 8mA | 197nC @ 10V | ±20V | 12100pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
|
|
IXYS |
MOSFET N-CH 500V 25A ISOPLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 25A (Tc) | 10V | 154 mOhm @ 22A, 10V | 6.5V @ 4mA | 93nC @ 10V | ±30V | 4800pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
|
|
IXYS |
2000V TO 3000V POLAR3 POWER MOSF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 3000V | 400mA (Tc) | 10V | 190 Ohm @ 200mA, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 283pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
|
|
IXYS |
MOSFET N-CH 4500V 0.2A TO247HV |
в производстве | N-Channel | MOSFET (Metal Oxide) | 4500V | 200mA (Tc) | 10V | 625 Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.6nC @ 10V | ±20V | 246pF @ 25V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
|
|
IXYS |
MOSFET N-CH 1.5KV 4A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1500V | 4A (Tc) | 10V | 6 Ohm @ 500mA, 10V | 5V @ 250µA | 44.5nC @ 10V | ±30V | 1576pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
IXYS |
500V POLAR2 HIPERFETS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 68A (Tc) | 10V | 55 mOhm @ 500mA, 10V | 5V @ 8mA | 220nC @ 10V | ±30V | 13700pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
IXYS |
MOSFET N-CH 600V 48A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 140 mOhm @ 24A, 10V | 6.5V @ 4mA | 140nC @ 10V | ±30V | 7020pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 1000V 24A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 24A (Tc) | 10V | 440 mOhm @ 12A, 10V | 6.5V @ 4mA | 140nC @ 10V | ±30V | 7200pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 500V 64A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 64A (Tc) | 10V | 85 mOhm @ 32A, 10V | 6.5V @ 4mA | 145nC @ 10V | ±30V | 6950pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 300V 210A PLUS264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 210A (Tc) | 10V | 14.5 mOhm @ 105A, 10V | 5V @ 8mA | 268nC @ 10V | ±20V | 16200pF @ 25V | - | 1890W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PLUS264™ | TO-264-3, TO-264AA |
|
|
IXYS |
MOSFET N-CH 800V 32A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 32A (Tc) | 10V | 270 mOhm @ 16A, 10V | 6.5V @ 4mA | 140nC @ 10V | ±30V | 6940pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
|
|
IXYS |
MOSFET N-CH 600V 48A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 140 mOhm @ 24A, 10V | 6.5V @ 4mA | 140nC @ 10V | ±30V | 7020pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
|
|
IXYS |
MOSFET N-CH 500V 64A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 64A (Tc) | 10V | 85 mOhm @ 32A, 10V | 6.5V @ 4mA | 145nC @ 10V | ±30V | 6950pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
|
|
IXYS |
MOSFET N-CH 600V 66A SOT-227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 66A (Tc) | 10V | 70 mOhm @ 40A, 10V | 5V @ 8mA | 190nC @ 10V | ±30V | 13100pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
IXYS |
MOSFET N-CH 500V 63A ISOPLUS264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 63A (Tc) | 10V | 43 mOhm @ 66A, 10V | 5V @ 8mA | 250nC @ 10V | ±30V | 18600pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ |
|
|
IXYS |
MOSFET N-CH 500V 45A ISOPLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 45A (Tc) | 10V | 95 mOhm @ 32A, 10V | 6.5V @ 4mA | 145nC @ 10V | ±30V | 6950pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 500V 80A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 80A (Tc) | 10V | 65 mOhm @ 40A, 10V | 6.5V @ 8mA | 200nC @ 10V | ±30V | 10000pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 1000V 32A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 320 mOhm @ 16A, 10V | 6.5V @ 8mA | 195nC @ 10V | ±30V | 9940pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 500V 80A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 80A (Tc) | 10V | 65 mOhm @ 40A, 10V | 6.5V @ 8mA | 200nC @ 10V | ±30V | 10000pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
|
|
IXYS |
MOSFET N-CH 800V 24A ISOPLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 24A (Tc) | 10V | 300 mOhm @ 16A, 10V | 6.5V @ 4mA | 140nC @ 10V | ±30V | 6940pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 300V 108A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 108A (Tc) | 10V | 16 mOhm @ 105A, 10V | 5V @ 8mA | 268nC @ 10V | ±20V | 16200pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ |
|
|
IXYS |
2000V TO 3000V POLAR3 POWER MOSF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 3000V | 1A (Tc) | 10V | 50 Ohm @ 500mA, 10V | 4V @ 250µA | 30.6nC @ 10V | ±20V | 895pF @ 25V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
|
|
IXYS |
MOSFET N-CH 200V 110A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 110A (Tc) | 10V | 24 mOhm @ 55A, 10V | 4.5V @ 3mA | 500nC @ 10V | ±20V | 23000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 600V 64A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 64A (Tc) | 10V | 95 mOhm @ 32A, 10V | 6.5V @ 4mA | 190nC @ 10V | ±30V | 9930pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 1.5KV 4A TO268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1500V | 4A (Tc) | 10V | 6 Ohm @ 500mA, 10V | 5V @ 250µA | 44.5nC @ 10V | ±30V | 1576pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
IXYS |
MOSFET N-CH 600V 42A ISOPLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 104 mOhm @ 32A, 10V | 6.5V @ 4mA | 190nC @ 10V | ±30V | 9930pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 85V 280A SOT-227B |
устарелый | N-Channel | MOSFET (Metal Oxide) | 85V | 280A (Tc) | 10V | 4.4 mOhm @ 100A, 10V | 4V @ 8mA | 580nC @ 10V | ±20V | 19000pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
IXYS |
MOSFET N-CH 1000V 23A ISOPLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 23A (Tc) | 10V | 350 mOhm @ 16A, 10V | 6.5V @ 8mA | 195nC @ 10V | ±30V | 9940pF @ 25V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
|
|
IXYS |
2500V TO 4500V VERY HI VOLT PWR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 4500V | 1A (Tc) | 10V | 80 Ohm @ 50mA, 10V | 6V @ 250µA | 46nC @ 10V | ±20V | 1700pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
|
|
IXYS |
MOSFET N-CH 3000V 2A TO247HV |
в производстве | N-Channel | MOSFET (Metal Oxide) | 3000V | 2A (Tc) | 10V | 21 Ohm @ 1A, 10V | 5V @ 250µA | 73nC @ 10V | ±20V | 1890pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 500V 46A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 20V | 160 mOhm @ 500mA, 20V | 6V @ 250µA | 260nC @ 15V | ±30V | 7000pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
IXYS |
MOSFET N-CH 300V 192A SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 192A (Tc) | 10V | 14.5 mOhm @ 105A, 10V | 5V @ 8mA | 268nC @ 10V | ±20V | 16200pF @ 25V | - | 1500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
IXYS |
MOSFET N-CH 1100V 40A PLUS264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1100V | 40A (Tc) | 10V | 260 mOhm @ 20A, 10V | 6.5V @ 8mA | 300nC @ 10V | ±30V | 14000pF @ 25V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
|
|
IXYS |
2000V TO 3000V POLAR3 POWER MOSF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 2000V | 3A (Tc) | 10V | 8 Ohm @ 1.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±20V | 1860pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
IXYS |
2000V TO 3000V POLAR3 POWER MOSF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 3000V | 2A (Tc) | 10V | 21 Ohm @ 1A, 10V | 5V @ 250µA | 73nC @ 10V | ±20V | 1890pF @ 25V | - | 520W (Tc) | -55°C ~ 155°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
IXYS |
SMPD HIPERFETS MOSFETS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 63A (Tc) | 10V | 43 mOhm @ 66A, 10V | 5V @ 8mA | 267nC @ 10V | ±30V | 18600pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | Polar3™ | 24-PowerSMD, 22 Leads |
|
|
IXYS |
MOSFET N-CH 500V 63A SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 63A (Tc) | 10V | 65 mOhm @ 40A, 10V | 6.5V @ 8mA | 200nC @ 10V | ±30V | 10000pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
IXYS |
MOSFET N-CH 1.5KV 12A TO268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1500V | 12A (Tc) | 10V | - | 4.5V @ 250µA | 106nC @ 10V | ±30V | 3720pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
IXYS |
MOSFET N-CH 800V 49A SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 49A (Tc) | 10V | 140 mOhm @ 31A, 10V | 6.5V @ 8mA | 270nC @ 10V | ±30V | 13600pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
IXYS |
MOSFET N-CH 500V 82A SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 82A (Tc) | 10V | 49 mOhm @ 50A, 10V | 6.5V @ 8mA | 255nC @ 10V | ±30V | 13800pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
IXYS |
MOSFET N-CH 800V 37A SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 37A (Tc) | 10V | 190 mOhm @ 22A, 10V | 6.5V @ 8mA | 185nC @ 10V | ±30V | 9840pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
IXYS |
MOSFET N-CH 1000V 28A SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 28A (Tc) | 10V | 320 mOhm @ 16A, 10V | 6.5V @ 8mA | 195nC @ 10V | ±30V | 9940pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
IXYS |
2000V TO 3000V POLAR3 POWER MOSF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 2000V | 6A (Tc) | 10V | 4 Ohm @ 3A, 10V | 5V @ 250µA | 143nC @ 10V | ±20V | 3700pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247PLUS-HV | TO-247-3 Variant |
|
|
IXYS |
2500V TO 4500V VERY HI VOLT PWR |
в производстве | N-Channel | MOSFET (Metal Oxide) | 4500V | 1.4A (Tc) | 10V | 40 Ohm @ 50mA, 10V | 6V @ 250µA | 88nC @ 10V | ±20V | 3300pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247PLUS-HV | TO-247-3 Variant |
