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IXYS |
250V/120A ULTRA JUNCTION X3-CLAS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 120A (Tc) | 10V | 12 mOhm @ 60A, 10V | 4.5V @ 4mA | 122nC @ 10V | ±20V | 7870pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
300V/100A ULTRA JUNCTION X3-CLAS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 100A (Tc) | 10V | 13.5 mOhm @ 50A, 10V | 4.5V @ 4mA | 122nC @ 10V | ±20V | 7.66nF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
200V/140A ULTRA JUNCTION X3-CLAS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 140A (Tc) | 10V | 9.6 mOhm @ 70A, 10V | 4.5V @ 4mA | 127nC @ 10V | ±20V | 7660pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 250V 150A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 150A (Tc) | 10V | 9 mOhm @ 75A, 10V | 4.5V @ 4mA | 154nC @ 10V | ±20V | 10400pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
300V/120A ULTRA JUNCTION X3-CLAS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 11 mOhm @ 60A, 10V | 4.5V @ 4mA | 170nC @ 10V | ±20V | 10.5nF @ 25V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
200V/220A ULTRA JUNCTION X3-CLAS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 220A (Tc) | 10V | 6.2 mOhm @ 110A, 10V | 4.5V @ 4mA | 204nC @ 10V | ±20V | 13600pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 170A SOT227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 170A (Tc) | 10V | 7.4 mOhm @ 85A, 10V | 4.5V @ 4mA | 190nC @ 10V | ±20V | 13500pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
200V/160A ULTRA JUNCTION X3-CLAS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 160A (Tc) | 10V | 6.2 mOhm @ 110A, 10V | 4.5V @ 4mA | 204nC @ 10V | ±20V | 13600pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 600V 4A TO-252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.2 Ohm @ 2A, 10V | 5V @ 250µA | 6.9nC @ 10V | ±30V | 365pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 600V 4A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.2 Ohm @ 2A, 10V | 5V @ 250µA | 6.9nC @ 10V | ±30V | 365pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 5A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.65 Ohm @ 2.5A, 10V | 5V @ 1mA | 6.9nC @ 10V | ±30V | 370pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 8A D2-PAK |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 800 mOhm @ 4A, 10V | 5.5V @ 100µA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 14A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 540 mOhm @ 7A, 10V | 5V @ 1mA | 25nC @ 10V | ±30V | 1480pF @ 25V | - | 327W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 14A TO-263AA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 540 mOhm @ 7A, 10V | 5V @ 1mA | 25nC @ 10V | ±30V | 1480pF @ 25V | - | 327W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 16A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 330 mOhm @ 8A, 10V | 4.5V @ 250µA | 43nC @ 10V | ±30V | 2530pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 8A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 300 mOhm @ 10A, 10V | 5V @ 1.5mA | 36nC @ 10V | ±30V | 1800pF @ 25V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1KV 750MA TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 750mA (Tc) | 10V | 17 Ohm @ 375mA, 10V | 4.5V @ 250µA | 7.8nC @ 10V | ±30V | 260pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 100V 75A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 25 mOhm @ 500mA, 10V | 5.5V @ 250µA | 74nC @ 10V | ±20V | 2250pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 8A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 300 mOhm @ 10A, 10V | 5V @ 1.5mA | 36nC @ 10V | ±30V | 1800pF @ 25V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 7A TO-263AA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 1.15 Ohm @ 3.5A, 10V | 5V @ 1mA | 13.3nC @ 10V | ±30V | 705pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 300V 36A TO-263AA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 36A (Tc) | 10V | 110 mOhm @ 18A, 10V | 4.5V @ 250µA | 30nC @ 10V | ±20V | 2040pF @ 25V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 16A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 360 mOhm @ 8A, 10V | 5V @ 2.5mA | 29nC @ 10V | ±30V | 1515pF @ 25V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 16A TO3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 330 mOhm @ 8A, 10V | 4.5V @ 250µA | 43nC @ 10V | ±30V | 2530pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 500V 20A TO-3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 300 mOhm @ 10A, 10V | 5V @ 1.5mA | 36nC @ 10V | ±30V | 1800pF @ 25V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 600V 16A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 470 mOhm @ 500mA, 10V | 5V @ 1.5mA | 36nC @ 10V | ±30V | 1830pF @ 25V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 24A TO-263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 270 mOhm @ 12A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±30V | 2890pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 16A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 330 mOhm @ 8A, 10V | 4.5V @ 250µA | 43nC @ 10V | ±30V | 2530pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 22A TO3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 360 mOhm @ 11A, 10V | 5V @ 1.5mA | 38nC @ 10V | ±30V | 2600pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 40V 300A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 2.5 mOhm @ 500mA, 10V | 4V @ 250µA | 145nC @ 10V | ±20V | 10700pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 28A TO3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 260 mOhm @ 14A, 10V | 5V @ 2.5mA | 50nC @ 10V | ±30V | 3560pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 75V 80A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 24 mOhm @ 40A, 10V | 4.5V @ 250µA | 103nC @ 10V | ±20V | 3600pF @ 25V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 74A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 74A (Tc) | 10V | 34 mOhm @ 37A, 10V | 5V @ 4mA | 107nC @ 10V | ±20V | 3300pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 30A TO3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 155 mOhm @ 15A, 10V | 4.5V @ 4mA | 56nC @ 10V | ±30V | 2270pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 500V 34A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 34A (Tc) | 10V | 170 mOhm @ 17A, 10V | 5V @ 4mA | 60nC @ 10V | ±30V | 3260pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 34A TO-3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 34A (Tc) | 10V | 170 mOhm @ 17A, 10V | 5V @ 4mA | 60nC @ 10V | ±30V | 3260pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
200V/90A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 12.8 mOhm @ 45A, 10V | 4.5V @ 1.5mA | 78nC @ 10V | ±20V | 5420pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 50A TO-3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 50A (Tc) | 10V | 120 mOhm @ 25A, 10V | 5V @ 4mA | 85nC @ 10V | ±30V | 4335pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 250V 80A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 80A (Tc) | 10V | 16 mOhm @ 40A, 10V | 4.5V @ 1.5mA | 83nC @ 10V | ±20V | 5430pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 94A TO-3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 94A (Tc) | 10V | 36 mOhm @ 47A, 10V | 5V @ 4mA | 102nC @ 10V | ±20V | 5510pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 300V 94A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 94A (Tc) | 10V | 36 mOhm @ 47A, 10V | 5V @ 4mA | 102nC @ 10V | ±20V | 5510pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 16A TO-268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 0V | 64 mOhm @ 8A, 0V | - | 225nC @ 5V | ±20V | 5700pF @ 25V | Depletion Mode | 830W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 200V 80A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 80A (Tc) | 10V | 32 mOhm @ 40A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 6160pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 70A TO-268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 70A (Tc) | 10V | 40 mOhm @ 35A, 10V | 6.5V @ 4mA | 67nC @ 10V | ±20V | 3150pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 50A TO-268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 50A (Tc) | 10V | 80 mOhm @ 25A, 10V | 6.5V @ 4mA | 65nC @ 10V | ±20V | 3165pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 500V 30A TO-268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 200 mOhm @ 15A, 10V | 6.5V @ 4mA | 62nC @ 10V | ±20V | 3200pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 120A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 27 mOhm @ 60A, 10V | 5V @ 4mA | 150nC @ 10V | ±20V | 8630pF @ 25V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 120A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 27 mOhm @ 60A, 10V | 5V @ 4mA | 150nC @ 10V | ±20V | 8630pF @ 25V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 200V 60A TO-3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 60A (Tc) | 10V | 45 mOhm @ 30A, 10V | 4.5V @ 250µA | 255nC @ 10V | ±20V | 10500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 500V 40A TO-3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 170 mOhm @ 20A, 10V | 4.5V @ 250µA | 320nC @ 10V | ±20V | 10400pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 1000V 15A TO-268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 15A (Tc) | 10V | 1.05 Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64nC @ 10V | ±30V | 3250pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
