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IXYS |
MOSFET N-CH 600V 42A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 185 mOhm @ 500mA, 10V | 5V @ 4mA | 78nC @ 10V | ±30V | 5150pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 20A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 210 mOhm @ 10A, 10V | 5.5V @ 250µA | 35nC @ 10V | ±30V | 1390pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 30A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 240 mOhm @ 15A, 10V | 5V @ 250µA | 82nC @ 10V | ±30V | 5050pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 82A TO-268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 82A (Tc) | 10V | 35 mOhm @ 41A, 10V | 5V @ 250µA | 142nC @ 10V | ±20V | 4800pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 50A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 145 mOhm @ 500mA, 10V | 5V @ 4mA | 94nC @ 10V | ±30V | 6300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 42A TO268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 42A (Tc) | 10V | 145 mOhm @ 500mA, 10V | 4.5V @ 4mA | 92nC @ 10V | ±30V | 5300pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 500V 52A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 52A (Tc) | 10V | 120 mOhm @ 26A, 10V | 4.5V @ 4mA | 113nC @ 10V | ±30V | 6800pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 62A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 62A (Tc) | 10V | 52 mOhm @ 31A, 10V | 4.5V @ 4mA | 104nC @ 10V | ±30V | 5940pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 60A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 60A (Tc) | 10V | 52 mOhm @ 30A, 10V | 5.5V @ 4mA | 107nC @ 10V | ±30V | 6180pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 21A TO-247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 250 mOhm @ 10.5A, 10V | 4V @ 4mA | 160nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 24A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 24A (Tc) | 10V | 400 mOhm @ 12A, 10V | 5V @ 4mA | 105nC @ 10V | ±30V | 7200pF @ 25V | - | 650W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 36A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 190 mOhm @ 18A, 10V | 5V @ 4mA | 102nC @ 10V | ±30V | 5800pF @ 25V | - | 650W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 88A TO-3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 88A (Tc) | 10V | 40 mOhm @ 44A, 10V | 5V @ 250µA | 180nC @ 10V | ±20V | 6300pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 70V 76A TO-247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 70V | 76A (Tc) | 10V | 12 mOhm @ 40A, 10V | 3.4V @ 4mA | 240nC @ 10V | ±20V | 4400pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 6A TO-247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 6A (Tc) | 10V | 1.9 Ohm @ 3A, 10V | 4.5V @ 2.5mA | 48nC @ 10V | ±20V | 2200pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 44A TO-268 D3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 140 mOhm @ 22A, 10V | 5V @ 4mA | 98nC @ 10V | ±30V | 5440pF @ 25V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 88A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 88A (Tc) | 10V | 40 mOhm @ 44A, 10V | 5V @ 250µA | 180nC @ 10V | ±20V | 6300pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 44A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 140 mOhm @ 22A, 10V | 5V @ 4mA | 98nC @ 10V | ±30V | 5440pF @ 25V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 650V 80A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 80A (Tc) | 10V | 40 mOhm @ 40A, 10V | 4.5V @ 4mA | 144nC @ 10V | ±30V | 7753pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 64A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 64A (Tc) | 10V | 95 mOhm @ 32A, 10V | 5V @ 4mA | 145nC @ 10V | ±30V | 9900pF @ 25V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 40A TO-247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 40A (Tc) | 10V | 85 mOhm @ 500mA, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 4600pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 140A TO264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 140A (Tc) | 10V | 17 mOhm @ 60A, 10V | 5V @ 4mA | 255nC @ 10V | ±20V | 19000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
850V/50A ULTRA JUNCTION X-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 50A (Tc) | 10V | 105 mOhm @ 500mA, 10V | 5.5V @ 4mA | 152nC @ 10V | ±30V | 4480pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 98A TO264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 98A (Tc) | 10V | 50 mOhm @ 500mA, 10V | 5V @ 8mA | 197nC @ 10V | ±30V | 13100pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 100V 67A TO247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 67A (Tc) | 10V | 25 mOhm @ 33.5A, 10V | 4V @ 4mA | 260nC @ 10V | ±20V | 4500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 75A TO247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 20 mOhm @ 37.5A, 10V | 4V @ 4mA | 260nC @ 10V | ±20V | 4500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
850V/50A ULTRA JUNCTION X-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 50A (Tc) | 10V | 105 mOhm @ 500mA, 10V | 5.5V @ 4mA | 152nC @ 10V | ±30V | 4480pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
850V/50A ULTRA JUNCTION X-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 50A (Tc) | 10V | 105 mOhm @ 500mA, 10V | 5.5V @ 4mA | 152nC @ 10V | ±30V | 4480pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 650V 100A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 100A (Tc) | 10V | 30 mOhm @ 50A, 10V | 5.5V @ 4mA | 180nC @ 10V | ±30V | 11300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 300V 160A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 160A (Tc) | 10V | 19 mOhm @ 60A, 10V | 5V @ 8mA | 335nC @ 10V | ±20V | 28000pF @ 25V | - | 1390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 40A TO-268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 170 mOhm @ 20A, 10V | 4.5V @ 250µA | 320nC @ 10V | ±20V | 10400pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 64A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 64A (Tc) | 10V | 96 mOhm @ 500mA, 10V | 5V @ 8mA | 200nC @ 10V | ±30V | 12000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 78A TO264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 78A (Tc) | 10V | 68 mOhm @ 500mA, 10V | 5V @ 4mA | 147nC @ 10V | ±30V | 9900pF @ 25V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1000V 32A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 320 mOhm @ 16A, 10V | 6.5V @ 1mA | 225nC @ 10V | ±30V | 14200pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 110A PLUS264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 110A (Tc) | 10V | 56 mOhm @ 55A, 10V | 5V @ 8mA | 245nC @ 10V | ±30V | 18000pF @ 25V | - | 1890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 70A TO247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 45 mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | ±20V | 6800pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXKH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 24A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 24A (Tc) | 10V | 440 mOhm @ 12A, 10V | 6.5V @ 4mA | 140nC @ 10V | ±30V | 7200pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1000V 32A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 320 mOhm @ 16A, 10V | 6.5V @ 8mA | 195nC @ 10V | ±30V | 9940pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 650V 76A X2 SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 30 mOhm @ 51A, 10V | 5V @ 250µA | 152nC @ 10V | ±30V | 10900pF @ 25V | - | 595AW (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 200V 110A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 110A (Tc) | 10V | 24 mOhm @ 55A, 10V | 4.5V @ 3mA | 500nC @ 10V | ±20V | 23000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1200V 26A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1200V | 26A (Tc) | 10V | 460 mOhm @ 13A, 10V | 6.5V @ 1mA | 225nC @ 10V | ±30V | 16000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 80A PLUS264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 80A (Tc) | 10V | 60 mOhm @ 500mA, 10V | 5.5V @ 8mA | 250nC @ 10V | ±30V | 15000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 200V 188A SOT-227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 188A (Tc) | 10V | 10.5 mOhm @ 105A, 10V | 4.5V @ 8mA | 255nC @ 10V | ±20V | 18600pF @ 25V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1000V 44A PLUS264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 44A (Tc) | 10V | 220 mOhm @ 22A, 10V | 6.5V @ 8mA | 264nC @ 10V | ±30V | 13600pF @ 25V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 55V 550A SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 55V | 550A (Tc) | 10V | 1.3 mOhm @ 100A, 10V | 4V @ 250µA | 595nC @ 10V | ±20V | 40000pF @ 25V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 200V 180A SOT-227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 180A (Tc) | 10V | 10 mOhm @ 500mA, 10V | 4V @ 8mA | 660nC @ 10V | ±20V | 22000pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
850V/90A ULT JUNC X-C HIPERFET P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 90A (Tc) | 10V | 41 mOhm @ 500mA, 10V | 5.5V @ 8mA | 340nC @ 10V | ±30V | 13300pF @ 25V | - | 1200W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 600V 60A SOT-227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 75 mOhm @ 500mA, 10V | 4.5V @ 8mA | 380nC @ 10V | ±20V | 15000pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 62A PLUS264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 62A (Tc) | 20V | 100 mOhm @ 31A, 20V | 5.5V @ 250µA | 550nC @ 20V | ±30V | 11500pF @ 25V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 66A SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 66A (Tc) | 10V | 75 mOhm @ 41A, 10V | 6.5V @ 8mA | 275nC @ 10V | ±30V | 13500pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
