IXYS Corporation агент по продажам - Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные - IXTH20N50D IXFB90N85X - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип полевого транзистора	Технологии	Слив к источнику напряжения (Vdss)	Ток - непрерывный слив (Id) при 25 ° C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Макс.) @ Id, Vgs	Vgs (th) (Max) @ Id	Заряд затвора (Qg) (Макс.) @ Vgs	Vgs (Макс.)	Входная емкость (Ciss) (Макс.) @ Vds	Функция FET	Рассеиваемая мощность (макс.)	Рабочая Температура	Тип монтажа	Пакет устройств поставщика	Упаковка / чехол
IXTH20N50D	IXYS	MOSFET N-CH 500V 20A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	330 mOhm @ 10A, 10V	-	125nC @ 10V	±30V	2500pF @ 25V	Depletion Mode	400W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFB90N85X	IXYS	850V/90A ULT JUNC X-C HIPERFET P	в производстве	N-Channel	MOSFET (Metal Oxide)	850V	90A (Tc)	10V	41 mOhm @ 500mA, 10V	5.5V @ 8mA	340nC @ 10V	±30V	13300pF @ 25V	-	1785W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXFN38N100P	IXYS	MOSFET N-CH 1000V 38A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	38A (Tc)	10V	210 mOhm @ 19A, 10V	6.5V @ 1mA	350nC @ 10V	±30V	24000pF @ 25V	-	1000W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN300N20X3	IXYS	200V/300A ULTRA JUNCTION X3-CLAS	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	300A (Tc)	10V	3.5 mOhm @ 150A, 10V	4.5V @ 8mA	375nC @ 10V	±20V	23800pF @ 25V	-	695W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN240N25X3	IXYS	MOSFET N-CH 250V 240A SOT227B	в производстве	N-Channel	MOSFET (Metal Oxide)	250V	240A (Tc)	10V	4.5 mOhm @ 120A, 10V	4.5V @ 8mA	345nC @ 10V	±20V	23800pF @ 25V	-	695W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN70N60Q2	IXYS	MOSFET N-CH 600V 70A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	70A (Tc)	10V	80 mOhm @ 35A, 10V	5V @ 8mA	265nC @ 10V	±30V	7200pF @ 25V	-	890W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN56N90P	IXYS	MOSFET N-CH 900V 56A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	900V	56A (Tc)	10V	135 mOhm @ 28A, 10V	6.5V @ 3mA	375nC @ 10V	±30V	23000pF @ 25V	-	1000W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTP44N10T	IXYS	MOSFET N-CH 100V 44A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	44A (Tc)	10V	30 mOhm @ 22A, 10V	4.5V @ 25µA	33nC @ 10V	±30V	1262pF @ 25V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTY44N10T	IXYS	MOSFET N-CH 100V 44A TO-252	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	44A (Tc)	10V	30 mOhm @ 22A, 10V	4.5V @ 25µA	33nC @ 10V	±30V	1262pF @ 25V	-	130W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTA08N50D2	IXYS	MOSFET N-CH 500V 800MA D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	800mA (Tc)	-	4.6 Ohm @ 400mA, 0V	-	12.7nC @ 5V	±20V	312pF @ 25V	Depletion Mode	60W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP24P085T	IXYS	MOSFET P-CH 85V 24A TO-220	в производстве	P-Channel	MOSFET (Metal Oxide)	85V	24A (Tc)	10V	65 mOhm @ 12A, 10V	4.5V @ 250µA	41nC @ 10V	±15V	2090pF @ 25V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP100N04T2	IXYS	MOSFET N-CH 40V 100A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	7 mOhm @ 25A, 10V	4V @ 250µA	25.5nC @ 10V	±20V	2690pF @ 25V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP70N075T2	IXYS	MOSFET N-CH 75V 70A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	75V	70A (Tc)	10V	12 mOhm @ 25A, 10V	4V @ 250µA	46nC @ 10V	±20V	2725pF @ 25V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA24P085T	IXYS	MOSFET P-CH 85V 24A TO-263	в производстве	P-Channel	MOSFET (Metal Oxide)	85V	24A (Tc)	10V	65 mOhm @ 12A, 10V	4.5V @ 250µA	41nC @ 10V	±15V	2090pF @ 25V	-	83W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA110N055T2	IXYS	MOSFET N-CH 55V 110A TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	6.6 mOhm @ 25A, 10V	4V @ 250µA	57nC @ 10V	±20V	3060pF @ 25V	-	180W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP1R6N50D2	IXYS	MOSFET N-CH 500V 1.6A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	1.6A (Tc)	-	2.3 Ohm @ 800mA, 0V	-	23.7nC @ 5V	±20V	645pF @ 25V	Depletion Mode	100W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA8N65X2	IXYS	MOSFET N-CH 650V 8A X2 TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	500 mOhm @ 4A, 10V	5V @ 250µA	12nC @ 10V	±30V	800pF @ 25V	-	150W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP28P065T	IXYS	MOSFET P-CH 65V 28A TO-220	в производстве	P-Channel	MOSFET (Metal Oxide)	65V	28A (Tc)	10V	45 mOhm @ 14A, 10V	4.5V @ 250µA	46nC @ 10V	±15V	2030pF @ 25V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP48N20T	IXYS	MOSFET N-CH 200V 48A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	48A (Tc)	10V	50 mOhm @ 24A, 10V	4.5V @ 250µA	60nC @ 10V	±30V	3000pF @ 25V	-	250W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA80N10T	IXYS	MOSFET N-CH 100V 80A TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	14 mOhm @ 25A, 10V	5V @ 100µA	60nC @ 10V	±20V	3040pF @ 25V	-	230W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP3N50D2	IXYS	MOSFET N-CH 500V 3A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	3A (Tc)	-	1.5 Ohm @ 1.5A, 0V	-	40nC @ 5V	±20V	1070pF @ 25V	Depletion Mode	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP3N100D2	IXYS	MOSFET N-CH 1000V 3A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	3A (Tc)	-	5.5 Ohm @ 1.5A, 0V	-	37.5nC @ 5V	±20V	1020pF @ 25V	Depletion Mode	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP200N055T2	IXYS	MOSFET N-CH 55V 200A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	55V	200A (Tc)	10V	4.2 mOhm @ 50A, 10V	4V @ 250µA	109nC @ 10V	±20V	6800pF @ 25V	-	360W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTH130N10T	IXYS	MOSFET N-CH 100V 130A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	9.1 mOhm @ 25A, 10V	4.5V @ 250µA	104nC @ 10V	±20V	5080pF @ 25V	-	360W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFP14N60P	IXYS	MOSFET N-CH 600V 14A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	550 mOhm @ 7A, 10V	5.5V @ 2.5mA	36nC @ 10V	±30V	2500pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTQ36N30P	IXYS	MOSFET N-CH 300V 36A TO-3P	в производстве	N-Channel	MOSFET (Metal Oxide)	300V	36A (Tc)	10V	110 mOhm @ 18A, 10V	5.5V @ 250µA	70nC @ 10V	±30V	2250pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFP22N65X2	IXYS	MOSFET N-CH 650V 22A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	160 mOhm @ 11A, 10V	5.5V @ 1.5mA	38nC @ 10V	±30V	2310pF @ 25V	-	390W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFP22N60P3	IXYS	MOSFET N-CH 600V 22A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	360 mOhm @ 11A, 10V	5V @ 1.5mA	38nC @ 10V	±30V	2600pF @ 25V	-	500W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP1N100	IXYS	MOSFET N-CH 1000V 1.5A TO-220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	1.5A (Tc)	10V	11 Ohm @ 1A, 10V	4.5V @ 25µA	14.5nC @ 10V	±30V	400pF @ 25V	-	54W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTQ22N50P	IXYS	MOSFET N-CH 500V 22A TO-3P	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	270 mOhm @ 11A, 10V	5.5V @ 250µA	50nC @ 10V	±30V	2630pF @ 25V	-	350W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTQ180N10T	IXYS	MOSFET N-CH 100V 180A TO-3P	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	6.4 mOhm @ 25A, 10V	4.5V @ 250µA	151nC @ 10V	±30V	6900pF @ 25V	-	480W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTQ460P2	IXYS	MOSFET N-CH 500V 24A TO3P	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	270 mOhm @ 12A, 10V	4.5V @ 250µA	48nC @ 10V	±30V	2890pF @ 25V	-	480W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFH22N50P	IXYS	MOSFET N-CH 500V 22A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	270 mOhm @ 11A, 10V	5.5V @ 2.5mA	50nC @ 10V	±30V	2630pF @ 25V	-	350W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTP52P10P	IXYS	MOSFET P-CH 100V 52A TO-220	в производстве	P-Channel	MOSFET (Metal Oxide)	100V	52A (Tc)	10V	50 mOhm @ 500mA, 10V	4.5V @ 250µA	60nC @ 10V	±20V	2845pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTQ44P15T	IXYS	MOSFET P-CH 150V 44A TO-3P	в производстве	P-Channel	MOSFET (Metal Oxide)	150V	44A (Tc)	10V	65 mOhm @ 500mA, 10V	4V @ 250µA	175nC @ 10V	±15V	13400pF @ 25V	-	298W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTQ26N50P	IXYS	MOSFET N-CH 500V 26A TO-3P	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	230 mOhm @ 13A, 10V	5.5V @ 250µA	65nC @ 10V	±30V	3600pF @ 25V	-	400W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTQ200N10T	IXYS	MOSFET N-CH 100V 200A TO-3P	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	5.5 mOhm @ 50A, 10V	4.5V @ 250µA	152nC @ 10V	±30V	9400pF @ 25V	-	550W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTP6N100D2	IXYS	MOSFET N-CH 1000V 6A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	6A (Tc)	-	2.2 Ohm @ 3A, 0V	-	95nC @ 5V	±20V	2650pF @ 25V	Depletion Mode	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFH26N50P3	IXYS	MOSFET N-CH 500V 26A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	230 mOhm @ 13A, 10V	5V @ 4mA	42nC @ 10V	±30V	2220pF @ 25V	-	500W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTA6N100D2	IXYS	MOSFET N-CH 1000V 6A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	6A (Tc)	-	2.2 Ohm @ 3A, 0V	-	95nC @ 5V	±20V	2650pF @ 25V	Depletion Mode	300W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFH26N60P	IXYS	MOSFET N-CH 600V 26A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	26A (Tc)	10V	270 mOhm @ 500mA, 10V	5V @ 4mA	72nC @ 10V	±30V	4150pF @ 25V	-	460W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH1N200P3	IXYS	MOSFET N-CH 2000V 1A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	2000V	1A (Tc)	10V	40 Ohm @ 500mA, 10V	4V @ 250µA	23.5nC @ 10V	±20V	646pF @ 25V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFH34N65X2	IXYS	MOSFET N-CH 650V 34A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	650V	34A (Tc)	10V	105 mOhm @ 17A, 10V	5.5V @ 2.5mA	56nC @ 10V	±30V	3330pF @ 25V	-	540W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFP20N85X	IXYS	850V/20A ULTRA JUNCTION X-CLASS	в производстве	N-Channel	MOSFET (Metal Oxide)	850V	20A (Tc)	10V	330 mOhm @ 500mA, 10V	5.5V @ 2.5mA	63nC @ 10V	±30V	1660pF @ 25V	-	540W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFP3N120	IXYS	MOSFET N-CH 1200V 3A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	1200V	3A (Tc)	10V	4.5 Ohm @ 500mA, 10V	5V @ 1.5mA	39nC @ 10V	±20V	1050pF @ 25V	-	200W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA1N200P3HV	IXYS	MOSFET N-CH 2000V 1A TO-263HV	в производстве	N-Channel	MOSFET (Metal Oxide)	2000V	1A (Tc)	10V	40 Ohm @ 500mA, 10V	4V @ 250µA	23.5nC @ 10V	±20V	646pF @ 25V	-	125W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFA3N120	IXYS	MOSFET N-CH 1200V 3A TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	1200V	3A (Tc)	10V	4.5 Ohm @ 1.5A, 10V	5V @ 1.5mA	39nC @ 10V	±20V	1050pF @ 25V	-	200W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXFA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP15N50L2	IXYS	MOSFET N-CH 500V 15A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	15A (Tc)	10V	480 mOhm @ 7.5A, 10V	4.5V @ 250µA	123nC @ 10V	±20V	4080pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTQ36N50P	IXYS	MOSFET N-CH 500V 36A TO-3P	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	36A (Tc)	10V	170 mOhm @ 500mA, 10V	5V @ 250µA	85nC @ 10V	±30V	5500pF @ 25V	-	540W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTA20N65X	IXYS	MOSFET N-CH 650V 20A TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	650V	20A (Tc)	10V	210 mOhm @ 10A, 10V	5.5V @ 250µA	35nC @ 10V	±30V	1390pF @ 25V	-	320W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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