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IXYS |
MOSFET N-CH 1000V 30A SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 30A (Tc) | 20V | 450 mOhm @ 15A, 20V | 5.5V @ 250µA | 545nC @ 20V | ±30V | 13700pF @ 25V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 16A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 400 mOhm @ 8A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
40V/270A TRENCH T POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 270A (Tc) | 10V | 2.2 mOhm @ 50A, 10V | 4V @ 250µA | 182nC @ 10V | ±15V | 9140pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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IXYS |
MOSFET N-CH 650V 34A TO-263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 34A (Tc) | 10V | 105 mOhm @ 17A, 10V | 5.5V @ 2.5mA | 56nC @ 10V | ±30V | 3330pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 500V 10A TO-3P |
в производстве | P-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 1 Ohm @ 5A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 2840pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 300V 120A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 24 mOhm @ 60A, 10V | 5V @ 4mA | 265nC @ 10V | ±20V | 20000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 102A X2 TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 102A (Tc) | 10V | 30 mOhm @ 51A, 10V | 5V @ 250µA | 152nC @ 10V | ±30V | 10900pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 64A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 64A (Tc) | 10V | 95 mOhm @ 32A, 10V | 6.5V @ 4mA | 190nC @ 10V | ±30V | 9930pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 850V 3.5A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 3.5A (Tc) | 10V | 2.5 Ohm @ 2A, 10V | 5.5V @ 250µA | 7nC @ 10V | ±30V | 247pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CHANNEL 700V 8A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 500 mOhm @ 500mA, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 10V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CHANNEL 700V 8A TO251 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 500 mOhm @ 500mA, 10V | 4.5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 10V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 | TO-251-3 Stub Leads, IPak |
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IXYS |
MOSFET N-CHANNEL 700V 4A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 550 mOhm @ 500mA, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 10V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH 850V 8A TO263HV |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 8A (Tc) | 10V | 850 mOhm @ 4A, 10V | 5.5V @ 250µA | 17nC @ 10V | ±30V | 654pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263HV | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 850V 3.5A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 3.5A (Tc) | 10V | 2.5 Ohm @ 2A, 10V | 5.5V @ 250µA | 7nC @ 10V | ±30V | 247pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (IXFP) | TO-220-3 |
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IXYS |
MOSFET N-CHANNEL 700V 8A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 500 mOhm @ 500mA, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 10V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 850V 3.5A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 3.5A (Tc) | 10V | 2.5 Ohm @ 2A, 10V | 5.5V @ 250µA | 7nC @ 10V | ±30V | 247pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 850V 3.5A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 3.5A (Tc) | 10V | 2.5 Ohm @ 2A, 10V | 5.5V @ 250µA | 7nC @ 10V | ±30V | 247pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 (IXFY) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
200V/36A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | 10V | 45 mOhm @ 18A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1425pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
60V/220A TRENCHT3 HIPERFET MOSFE |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 4 mOhm @ 100A, 10V | 4V @ 250µA | 136nC @ 10V | ±20V | 8500pF @ 25V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
200V/36A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | 10V | 45 mOhm @ 18A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1425pF @ 25V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
300V/26A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 26A (Tc) | 10V | 66 mOhm @ 13A, 10V | 4.5V @ 500µA | 22nC @ 10V | ±20V | 1.465nF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
FET N-CHANNEL |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 50 mOhm @ 19A, 10V | 4.5V @ 1mA | 35nC @ 10V | ±20V | 2240pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
120V/110A TRENCHT2 POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 120V | 110A (Tc) | 10V | 14 mOhm @ 55A, 10V | 4.5V @ 250µA | 120nC @ 10V | ±20V | 6570pF @ 25V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
FET N-CHANNEL |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 38A (Tc) | - | - | - | 35nC @ 15V | - | 2440pF @ 15V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
FET N-CHANNEL |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 50 mOhm @ 19A, 10V | 4.5V @ 1mA | 35nC @ 10V | ±20V | 2240pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
120V/140A TRENCHT2 POWER MOSFET |
в производстве | N-Channel | MOSFET (Metal Oxide) | 120V | 140A (Tc) | 10V | 10 mOhm @ 70A, 10V | 4.5V @ 250µA | 174nC @ 10V | ±20V | 9700pF @ 25V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
60V/220A TRENCHT3 HIPERFET MOSFE |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 4 mOhm @ 100A, 10V | 4V @ 250µA | 136nC @ 10V | ±20V | 8500pF @ 25V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CHANNEL 850V 14A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 14A (Tc) | 10V | 550 mOhm @ 7A, 10V | 5.5V @ 1mA | 30nC @ 10V | ±30V | 1043pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 850V 14A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 14A (Tc) | 10V | 550 mOhm @ 500mA, 10V | 5.5V @ 1mA | 30nC @ 10V | ±30V | 1043pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CHANNEL 250V 30A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 30A (Tc) | 10V | 60 mOhm @ 15A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1450pF @ 25V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 60A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 23 mOhm @ 30A, 10V | 4.5V @ 1.5mA | 50nC @ 10V | ±20V | 3610pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (IXFP) | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 60A TO220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 23 mOhm @ 30A, 10V | 4.5V @ 1.5mA | 50nC @ 10V | ±20V | 3610pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (IXFP) | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 60A TO263AA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 23 mOhm @ 30A, 10V | 4.5V @ 1.5mA | 50nC @ 10V | ±20V | 3610pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
200V/72A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 20 mOhm @ 36A, 10V | 4.5V @ 1.5mA | 55nC @ 10V | ±20V | 3780pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
200V/72A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 20 mOhm @ 36A, 10V | 4.5V @ 1.5mA | 55nC @ 10V | ±20V | 3780pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
200V/72A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 20 mOhm @ 36A, 10V | 4.5V @ 1.5mA | 55nC @ 10V | ±20V | 3780pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
FET N-CHANNEL |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 56A (Tc) | 10V | 27 mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56nC @ 10V | ±20V | 3750pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH 850V 14A TO247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 14A (Tc) | 10V | 550 mOhm @ 500mA, 10V | 5.5V @ 1mA | 30nC @ 10V | ±30V | 1043pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
200V/72A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 20 mOhm @ 36A, 10V | 4.5V @ 1.5mA | 55nC @ 10V | ±20V | 3780pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
300V/72A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 72A (Tc) | 10V | 19 mOhm @ 36A, 10V | 4.5V @ 1.5mA | 82nC @ 10V | ±20V | 5.4nF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CHANNEL 250V 60A TO3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 23 mOhm @ 30A, 10V | 4.5V @ 1.5mA | 50nC @ 10V | ±20V | 3610pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
300V/56A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 56A (Tc) | 10V | 27 mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56nC @ 10V | ±20V | 3.75nF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
300V/72A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 72A (Tc) | 10V | 19 mOhm @ 36A, 10V | 4.5V @ 1.5mA | 82nC @ 10V | ±20V | 5.4nF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
200V/90A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 12.8 mOhm @ 45A, 10V | 4.5V @ 1.5mA | 78nC @ 10V | ±20V | 5420pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
300V/72A ULTRA JUNCTION X3-CLASS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 72A (Tc) | 10V | 19 mOhm @ 36A, 10V | 4.5V @ 1.5mA | 82nC @ 10V | ±20V | 5.4nF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
200V/140A ULTRA JUNCTION X3-CLAS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 140A (Tc) | 10V | 9.6 mOhm @ 70A, 10V | 4.5V @ 4mA | 127nC @ 10V | ±20V | 7660pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 250V 44A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 44A (Tc) | 10V | 18 mOhm @ 40A, 10V | 4.5V @ 1.5mA | 83nC @ 10V | ±20V | 5430pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISO TO-247-3 | TO-247-3 |
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IXYS |
200V/140A ULTRA JUNCTION X3-CLAS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 140A (Tc) | 10V | 9.6 mOhm @ 70A, 10V | 4.5V @ 4mA | 127nC @ 10V | ±20V | 7660pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 120A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 120A (Tc) | 10V | 12 mOhm @ 60A, 10V | 4.5V @ 4mA | 122nC @ 10V | ±20V | 7870pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 850V 30A TO268 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 850V | 30A (Tc) | 10V | 220 mOhm @ 500mA, 10V | 5.5V @ 2.5mA | 68nC @ 10V | ±30V | 2460pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 (IXFT) | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
