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Rohm Semiconductor |
MOSFET P-CH 20V 3A TSMT3 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 75 mOhm @ 3A, 4.5V | 2V @ 1mA | 9.3nC @ 4.5V | ±12V | 840pF @ 10V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 20V 2A TSMT3 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 2.5V, 4.5V | 135 mOhm @ 2A, 4.5V | 2V @ 1mA | 4.9nC @ 4.5V | ±12V | 430pF @ 10V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 100V 1.0A TSMT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4V, 10V | 520 mOhm @ 1A, 10V | 2.5V @ 1mA | 3.5nC @ 5V | ±20V | 140pF @ 25V | - | 540mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 250V 0.5A SC-96-3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 250V | 500mA (Ta) | 4V, 10V | 8.8 Ohm @ 250mA, 10V | 3V @ 1mA | 3.5nC @ 10V | ±20V | 70pF @ 25V | - | 540mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2.5A TUMT3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 2.5V, 4.5V | 67 mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 5.2nC @ 4.5V | 12V | 270pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 2.5V, 4.5V | 43 mOhm @ 4.5A, 4.5V | 1.5V @ 1mA | 10.7nC @ 4.5V | 12V | 540pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 100V 1.5A TSMT |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 4V, 10V | 470 mOhm @ 1.5A, 10V | 2.5V @ 1mA | 322nC @ 10V | ±20V | 950pF @ 25V | - | 600mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 45V 2A TSMT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 45V | 2A (Ta) | 2.5V, 4.5V | 180 mOhm @ 2A, 4.5V | 1.5V @ 1mA | 4.1nC @ 4.5V | ±12V | 200pF @ 10V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 24A 8-HSOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta) | 4.5V, 10V | 3.3 mOhm @ 24A, 10V | 2.5V @ 1mA | 23nC @ 10V | ±20V | 1500pF @ 15V | - | 3W (Ta), 27.4W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET P-CH 100V 1.5A TSMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 4V, 10V | 470 mOhm @ 1.5A, 10V | 2.5V @ 1mA | 17nC @ 5V | ±20V | 950pF @ 25V | - | 600mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 10A HUML2020L8 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V | 12.4 mOhm @ 10A, 4.5V | 1.5V @ 1mA | 13nC @ 4.5V | ±12V | 1460pF @ 15V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | HUML2020L8 | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET P-CH 45V 16A CPT3 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 45V | 16A (Ta) | 4V, 10V | 50 mOhm @ 16A, 10V | 3V @ 1mA | 16nC @ 5V | ±20V | 2000pF @ 10V | - | 20W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 60V 2A SOT-89 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 2.5V, 4.5V | 240 mOhm @ 2A, 4.5V | 1.5V @ 1mA | 10nC @ 4V | ±12V | 160pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | MPT3 | TO-243AA |
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Rohm Semiconductor |
MOSFET N-CH 100V 20A CPT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Tc) | 4V, 10V | 46 mOhm @ 20A, 10V | 2.5V @ 1mA | 55nC @ 10V | ±20V | 2100pF @ 25V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 60V 6.5A SOP8 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Ta) | 4V, 10V | 37 mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16nC @ 5V | 20V | 900pF @ 10V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
PCH -60V -14A POWER MOSFET |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta) | 4V, 10V | 84 mOhm @ 14A, 10V | 3V @ 1mA | 27nC @ 10V | ±20V | 1900pF @ 10V | - | 20W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CH 45V 7A SOP8 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 27 mOhm @ 7A, 10V | 2.5V @ 1mA | 47.6nC @ 5V | ±20V | 4100pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 100V 25A LPTS |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Ta) | 4V, 10V | 63 mOhm @ 25A, 10V | 2.5V @ 1mA | 60nC @ 5V | ±20V | 8000pF @ 25V | - | 50W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 600V 76A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 42 mOhm @ 44.4A, 10V | 4V @ 1mA | 260nC @ 10V | ±20V | 6500pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 50V 0.2A EMT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 0.9V, 4.5V | 2.2 Ohm @ 200mA, 4.5V | 800mV @ 1mA | - | ±8V | 26pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | EMT3 | SC-75, SOT-416 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A VML0806 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8 Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 100mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | VML0806 | 3-SMD, No Lead |
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Rohm Semiconductor |
MOSFET P-CH 30V 0.25A UMT3F |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 250mA (Ta) | 4V, 10V | 1.4 Ohm @ 250mA, 10V | 2.5V @ 1mA | - | ±20V | 30pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | UMT3F | SC-85 |
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Rohm Semiconductor |
MOSFET N-CH 60V 0.25A UMT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.4 Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.18A VML1006 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 180mA (Ta) | 1.2V, 4.5V | 2 Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 12pF @ 10V | - | 100mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | DFN1006-3 (VML1006) | SC-101, SOT-883 |
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Rohm Semiconductor |
MOSFET P-CH 30V 2.5A WEMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | ±20V | 480pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET P-CH 30V 1.5A TUMT3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4V, 10V | 160 mOhm @ 1.5A, 10V | 2.5V @ 1mA | 6.4nC @ 10V | ±20V | 230pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 500MA SOT-346 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 500mA (Ta) | 4V, 10V | 550 mOhm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 45pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | SMT3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 10A HSMT8 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 10.4 mOhm @ 10A, 10V | 2.5V @ 1mA | 22nC @ 10V | ±20V | 1100pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET P-CH 20V 2.5A WEMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.5V, 4.5V | 65 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 21nC @ 4.5V | ±10V | 1300pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET P-CH 12V 3A WEMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.5V, 4.5V | 42 mOhm @ 3A, 4.5V | 1V @ 1mA | 22nC @ 4.5V | -8V | 2700pF @ 6V | - | 700mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET N-CH 60V 300MA SOT-346 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4V, 10V | 1 Ohm @ 300mA, 10V | 2.5V @ 1mA | 6nC @ 10V | ±20V | 33pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | SMT3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.25A SOT-323 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 2.5V, 4.5V | 1.5 Ohm @ 250mA, 4.5V | 2V @ 1mA | - | ±12V | 50pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET N-CH 30V 8A 8-HUML |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 17.6 mOhm @ 8A, 10V | 2.5V @ 250µA | 5.8nC @ 10V | ±20V | 295pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | HUML2020L8 | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 125 mOhm @ 2A, 4.5V | 1.5V @ 1mA | 3.3nC @ 4.5V | 12V | 135pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 12A 8-HSMT |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 8.8 mOhm @ 12A, 10V | 2.5V @ 1mA | 10nC @ 10V | ±20V | 590pF @ 15V | - | 2W (Ta), 16W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 4A SC96 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 2.5V, 4.5V | 37 mOhm @ 4A, 4.5V | 1.5V @ 1mA | 4.3nC @ 4.5V | ±12V | 480pF @ 15V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 30V 5A TSMT |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 27 mOhm @ 5A, 10V | 2.5V @ 1mA | 20.8nC @ 10V | ±20V | 940pF @ 15V | - | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 12V 2.5A TSMT3 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 12V | 2.5A (Ta) | 1.5V, 4.5V | 61 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 13nC @ 4.5V | ±10V | 1350pF @ 6V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 15A 8-HSMT |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 6.1 mOhm @ 15A, 10V | 2.5V @ 1mA | 15.3nC @ 10V | ±20V | 850pF @ 15V | - | 2W (Ta), 17.2W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 1.5A TSMT3 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4V, 10V | 235 mOhm @ 1.5A, 10V | - | 2.6nC @ 5V | ±20V | 190pF @ 10V | - | 1W (Ta) | - | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 100 mOhm @ 2A, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | ±12V | 175pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 70 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 4.1nC @ 5V | 20V | 165pF @ 10V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 30V 7.5A 8DFN |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4.5V, 10V | 21.7 mOhm @ 7.5A, 10V | 2.5V @ 1mA | 22nC @ 10V | ±20V | 1000pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | HUML2020L8 | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 5.5A TSMT |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 5.5A (Ta) | 4.5V, 10V | 25 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 8.6nC @ 10V | ±20V | 355pF @ 15V | - | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 30V 2.5A TUMT6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | ±20V | 480pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 12V 3A TUMT3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.5V, 4.5V | 39 mOhm @ 3A, 4.5V | 1V @ 1mA | 18nC @ 4.5V | ±10V | 1860pF @ 6V | - | 800mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 20V 3.5A TUMT6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.5V, 4.5V | 43 mOhm @ 3.5A, 4.5V | 1V @ 1mA | 5.7nC @ 4.5V | ±10V | 460pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 12V 3.5A TUMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 1.5V, 4.5V | 36 mOhm @ 3.5A, 4.5V | 1V @ 1mA | - | ±10V | 1940pF @ 6V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 8A 8-HUML |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 17.6 mOhm @ 8A, 10V | 2V @ 250µA | 14.5nC @ 10V | ±20V | 660pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | HUML2020L8 | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 3.5A TSMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 65 mOhm @ 3.5A, 10V | 2.5V @ 1mA | 9.2nC @ 5V | ±20V | 780pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
