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Rohm Semiconductor |
MOSFET N-CH 30V 3A SOT-89 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4V, 10V | 120 mOhm @ 3A, 10V | 2.5V @ 1mA | 6.5nC @ 10V | ±20V | 160pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | MPT3 | TO-243AA |
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Rohm Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4V, 10V | 38 mOhm @ 4.5A, 10V | 2.5V @ 1mA | 9.5nC @ 5V | ±20V | 520pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 20V 3A TUMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 70 mOhm @ 3A, 4.5V | 2V @ 1mA | 8nC @ 4.5V | ±12V | 760pF @ 10V | - | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 7.5A 8SOP |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 23.5 mOhm @ 7.5A, 10V | 2.5V @ 1mA | 25nC @ 10V | ±20V | 1250pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 30V 4A SOP8 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 75 mOhm @ 4A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | ±20V | 480pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 13A HSMT8 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 8.1 mOhm @ 13A, 10V | 2.5V @ 1mA | 14nC @ 10V | ±20V | 840pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET P-CH 45V 7A SOP8 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 27 mOhm @ 7A, 10V | 2.5V @ 1mA | 47.6nC @ 5V | ±20V | 4100pF @ 10V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 45V 9.5A 8-SOIC |
устарелый | N-Channel | MOSFET (Metal Oxide) | 45V | 9.5A (Ta) | 4V, 10V | 16 mOhm @ 9.5A, 10V | - | 26.5nC @ 5V | 20V | 1830pF @ 10V | - | 2W (Ta) | - | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 500V 9A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 840 mOhm @ 4.5A, 10V | 4V @ 1mA | 18nC @ 10V | ±30V | 630pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196 mOhm @ 9.5A, 10V | 4V @ 1mA | 60nC @ 10V | ±20V | 1400pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 800V 8A TO-220FM |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Ta) | 10V | 1.03 Ohm @ 4A, 10V | 5V @ 1mA | 39nC @ 10V | ±30V | 1080pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130 mOhm @ 14.5A, 10V | 4V @ 1mA | 85nC @ 10V | ±30V | 2100pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 25A TO3PF |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 180 mOhm @ 12.5A, 10V | 5V @ 1mA | 85nC @ 10V | ±30V | 3500pF @ 25V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 25A TO247 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 180 mOhm @ 12.5A, 10V | 5V @ 1mA | 85nC @ 10V | ±30V | 3500pF @ 25V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A VML1006 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8 Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 100mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | DFN1006-3 (VML1006) | SC-101, SOT-883 |
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Rohm Semiconductor |
MOSFET P-CH 12V 1.3A WEMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 12V | 1.3A (Ta) | 1.5V, 4.5V | 260 mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | ±10V | 290pF @ 6V | Schottky Diode (Isolated) | 700mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET P-CH 20V 1A TUMT5 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 2.5V, 4.5V | 390 mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | ±12V | 150pF @ 10V | Schottky Diode (Isolated) | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT5 | 6-SMD (5 Leads), Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 30V 11A 8-HUML |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 11.3 mOhm @ 11A, 10V | 2.5V @ 250µA | 7.4nC @ 10V | ±20V | 504pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | HUML2020L8 | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET N-CH 20V 2.5A TSMT5 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.5V, 4.5V | 81 mOhm @ 2.5A, 4.5V | 1.3V @ 1mA | 3.5nC @ 4.5V | ±10V | 280pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Rohm Semiconductor |
MOSFET P-CH 30V 2A TUMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 120 mOhm @ 2A, 10V | - | 3.9nC @ 5V | ±20V | 350pF @ 10V | - | 1W (Ta) | - | SMD Поверхностный монтаж | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 1A TSMT6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 1A (Ta) | 4V, 10V | 400 mOhm @ 1A, 10V | 2.5V @ 1mA | 1.7nC @ 5V | ±20V | 90pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 100 mOhm @ 2A, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | ±12V | 175pF @ 10V | Schottky Diode (Isolated) | 900mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Rohm Semiconductor |
MOSFET N-CH 30V 1.5A TUMT5 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 2.5V, 4.5V | 240 mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2nC @ 4.5V | 12V | 80pF @ 10V | Schottky Diode (Isolated) | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT5 | 6-SMD (5 Leads), Flat Lead |
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Rohm Semiconductor |
MOSFET P-CH 12V 4.5A TSST8 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 1.5V, 4.5V | 30 mOhm @ 4.5A, 4.5V | 1V @ 1mA | 40nC @ 4.5V | -8V | 4200pF @ 6V | - | 650mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-TSST | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET P-CH 20V 2A TSMT5 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 2.5V, 4.5V | 125 mOhm @ 2A, 4.5V | 2V @ 1mA | 4.8nC @ 4.5V | ±12V | 450pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Rohm Semiconductor |
MOSFET P-CH 12V 4.5A TSMT6 |
устарелый | P-Channel | MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 1.5V, 4.5V | 35 mOhm @ 4.5A, 4.5V | 1V @ 1mA | 31nC @ 4.5V | ±10V | 2450pF @ 6V | - | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 1.5A TUMT6 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 2.5V, 4.5V | 240 mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2nC @ 4.5V | ±12V | 80pF @ 10V | Schottky Diode (Isolated) | 1W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 20V 2.4A TSST8 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 1.5V, 4.5V | 105 mOhm @ 2.4A, 4.5V | 1V @ 1mA | 6.7nC @ 4.5V | ±10V | 850pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-TSST | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 200V 3A CPT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 200V | 3A (Tc) | 10V | 870 mOhm @ 1.5A, 10V | 5.2V @ 1mA | 6.7nC @ 10V | ±30V | 270pF @ 25V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 6.5A SOP8 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4V, 10V | 27 mOhm @ 6.5A, 10V | 2.5V @ 1mA | 8.6nC @ 5V | ±20V | 430pF @ 10V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 28A 8-HSOP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta) | 4.5V, 10V | 2.6 mOhm @ 28A, 10V | 2.5V @ 1mA | 36nC @ 10V | ±20V | 2300pF @ 15V | - | 3W (Ta), 31W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 45V 20A CPT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 45V | 20A (Ta) | 4V, 10V | 28 mOhm @ 20A, 10V | 2.5V @ 1mA | 12nC @ 5V | ±20V | 950pF @ 10V | - | 20W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 10A HSMT8 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 12.3 mOhm @ 10A, 10V | 2.5V @ 1mA | 9.9nC @ 10V | ±20V | 520pF @ 15V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 600V 4A CPT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 980 mOhm @ 1.5A, 10V | 4V @ 1mA | 15nC @ 10V | ±20V | 250pF @ 25V | - | 20W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 9A 8-SOIC |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 15 mOhm @ 9A, 10V | 2.5V @ 1mA | 15nC @ 5V | 20V | 810pF @ 10V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 60V 6.5A 8-SOIC |
устарелый | N-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Ta) | 4V, 10V | 37 mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16nC @ 5V | 20V | 900pF @ 10V | - | 2W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 60V 22A SOT428 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta) | 4V, 10V | - | - | - | ±20V | - | - | 20W (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 250V 8A SOT-428 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Ta) | 10V | 300 mOhm @ 4A, 10V | 5V @ 1mA | 25nC @ 10V | ±30V | 1440pF @ 25V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CH 45V 6A 8-SOIC |
устарелый | P-Channel | MOSFET (Metal Oxide) | 45V | 6A (Ta) | 4V, 10V | 36 mOhm @ 6A, 10V | - | 32.2nC @ 5V | ±20V | 2700pF @ 10V | - | 2W (Ta) | - | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 600V 4A CPT |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Ta) | 10V | 1.8 Ohm @ 2A, 10V | 4.5V @ 1mA | 11nC @ 10V | ±25V | 280pF @ 25V | - | 40W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 600V 6A CPT |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 1.2 Ohm @ 3A, 10V | 4.5V @ 1mA | 15nC @ 10V | ±30V | 460pF @ 25V | - | 40W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 600V 6A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 1.2 Ohm @ 3A, 10V | 4.5V @ 1mA | 15nC @ 10V | ±30V | 520pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 8A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 800 mOhm @ 4A, 10V | 4.5V @ 1mA | 21nC @ 10V | ±30V | 680pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 10A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | - | - | - | ±30V | - | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 8A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Ta) | 10V | 850 mOhm @ 4A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 920pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 13A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Ta) | 10V | 380 mOhm @ 6.5A, 10V | 4.5V @ 1mA | 35nC @ 10V | ±30V | 1300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196 mOhm @ 9.5A, 10V | 4V @ 1mA | 60nC @ 10V | ±20V | 1400pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 11A TO-220FM |
устарелый | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Ta), 5.4A (Tc) | 10V | 520 mOhm @ 5.5A, 10V | 4V @ 1mA | 30nC @ 10V | ±30V | 950pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 25A TO3PF |
устарелый | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 150 mOhm @ 12.5A, 10V | 4.5V @ 1mA | 88nC @ 10V | ±20V | 3250pF @ 10V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 35A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 102 mOhm @ 18.1A, 10V | 4V @ 1mA | 110nC @ 10V | ±20V | 2720pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |