номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.1A USV устарелыйN-ChannelMOSFET (Metal Oxide)20V100mA (Ta)2.5V12 Ohm @ 10mA, 2.5V
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10V8.5pF @ 3V
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200mW (Ta)150°C (TJ)SMD Поверхностный монтажUSV5-TSSOP, SC-70-5, SOT-353
Toshiba Semiconductor and Storage MOSFET P-CH 30V 2.7A TSM устарелыйP-ChannelMOSFET (Metal Oxide)30V2.7A (Ta)4V, 10V85 mOhm @ 1.35A, 10V
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±20V413pF @ 15V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.1A USV в производствеN-ChannelMOSFET (Metal Oxide)20V100mA (Ta)1.5V, 4V3 Ohm @ 10mA, 4V
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±10V9.3pF @ 3V
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200mW (Ta)150°C (TJ)SMD Поверхностный монтажUSV5-TSSOP, SC-70-5, SOT-353
Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.1A SSM устарелыйN-ChannelMOSFET (Metal Oxide)20V100mA (Ta)2.5V12 Ohm @ 10mA, 2.5V
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10V8.5pF @ 3V
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100mW (Ta)150°C (TJ)SMD Поверхностный монтажSSMSC-75, SOT-416
Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.1A CST3 в производствеP-ChannelMOSFET (Metal Oxide)20V100mA (Ta)1.5V, 4V8 Ohm @ 10mA, 4V1.1V @ 100µA
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±10V11pF @ 3V
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100mW (Ta)150°C (TJ)SMD Поверхностный монтажCST3SC-101, SOT-883
Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.33A VESM Discontinued at -P-ChannelMOSFET (Metal Oxide)20V330mA (Ta)1.5V, 4.5V1.31 Ohm @ 100mA, 4.5V
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1.2nC @ 4V±8V43pF @ 10V
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150mW (Ta)150°C (TJ)SMD Поверхностный монтажVESMSOT-723
Toshiba Semiconductor and Storage MOSFET N-CH 30V 3.2A TSM устарелыйN-ChannelMOSFET (Metal Oxide)30V3.2A (Ta)2.5V, 4V120 mOhm @ 1.6A, 4V
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±10V152pF @ 10V
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1.25W (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N-CH 20V 3.5A TSM устарелыйN-ChannelMOSFET (Metal Oxide)20V3.5A (Ta)1.8V, 4V56 mOhm @ 2A, 4V
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4.8nC @ 4V±12V320pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N-CH 30V 3A TSM устарелыйN-ChannelMOSFET (Metal Oxide)30V3A (Ta)1.8V, 4V71 mOhm @ 2A, 4V
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4.3nC @ 4V±12V270pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N-CH 20V 4.7A TSM устарелыйN-ChannelMOSFET (Metal Oxide)20V4.7A (Ta)1.8V, 4V31 mOhm @ 4A, 4V
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±12V1020pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N-CH 20V 5A S-MOS устарелыйN-ChannelMOSFET (Metal Oxide)20V5A (Ta)1.5V, 4V28 mOhm @ 4A, 4V
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14.8nC @ 4V±10V1120pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM Discontinued at -N-ChannelMOSFET (Metal Oxide)60V2.5A (Ta)4.5V, 10V107 mOhm @ 2A, 10V
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7nC @ 10V±20V235pF @ 30V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажTSMTO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N-CH 60V 0.2A S-MINI устарелыйN-ChannelMOSFET (Metal Oxide)60V200mA (Ta)4.5V, 10V2.1 Ohm @ 500mA, 10V
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±20V17pF @ 25V
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200mW (Ta)150°C (TJ)SMD Поверхностный монтажSC-59TO-236-3, SC-59, SOT-23-3
Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A 5DFN в производствеN-ChannelMOSFET (Metal Oxide)600V11.5A (Ta)10V300 mOhm @ 5.8A, 10V3.7V @ 600µA25nC @ 10V±30V890pF @ 300VSuper Junction104W (Tc)150°C (TJ)SMD Поверхностный монтаж4-DFN-EP (8x8)4-VSFN Exposed Pad
Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A 5DFN в производствеN-ChannelMOSFET (Metal Oxide)600V15.8A (Ta)10V190 mOhm @ 7.9A, 10V3.7V @ 790µA38nC @ 10V±30V1350pF @ 300VSuper Junction139W (Tc)150°C (TJ)SMD Поверхностный монтаж4-DFN-EP (8x8)4-VSFN Exposed Pad
Toshiba Semiconductor and Storage MOSFET N-CH 120V 42A TO-220 в производствеN-ChannelMOSFET (Metal Oxide)120V42A (Tc)10V9.4 mOhm @ 21A, 10V4V @ 1mA52nC @ 10V±20V3100pF @ 60V
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35W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET P-CH 30V 6A VS-8 Discontinued at -P-ChannelMOSFET (Metal Oxide)30V6A (Ta)4.5V, 10V28 mOhm @ 3A, 10V2V @ 100µA22nC @ 10V+20V, -25V970pF @ 10V
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700mW (Ta)150°C (TJ)SMD Поверхностный монтажVS-8 (2.9x1.5)8-SMD, Flat Lead
Toshiba Semiconductor and Storage MOSFET N-CH 600V 15.8A TO-220AB в производствеN-ChannelMOSFET (Metal Oxide)600V15.8A (Ta)10V230 mOhm @ 7.9A, 10V4.5V @ 790µA43nC @ 10V±30V1350pF @ 300V
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130W (Tc)150°C (TJ)Through HoleTO-220TO-220-3
Toshiba Semiconductor and Storage MOSFET N-CH 50V 100MA USM устарелый
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Toshiba Semiconductor and Storage MOSFET P-CH устарелый
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Through HoleTO-220NISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET P-CH устарелый
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Through HoleTO-220NISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET P-CH устарелый
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Through HoleTO-220NISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET P-CH устарелый
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Through HoleTO-220NISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET P-CH устарелый
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Through HoleTO-220NISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET P-CH устарелый
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Through HoleTO-220NISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET P-CH устарелый
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Through HoleTO-220NISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET P-CH устарелый
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Through HoleTO-220NISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET N-CH устарелый
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Through HoleTO-92MODTO-226-3, TO-92-3 Long Body
Toshiba Semiconductor and Storage MOSFET P-CHANNEL 60V 5A PW-MOLD в производствеP-ChannelMOSFET (Metal Oxide)60V5A (Ta)4V, 10V170 mOhm @ 2.5A, 10V2V @ 1mA15nC @ 10V±20V700pF @ 10V
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20W (Tc)150°CSMD Поверхностный монтажPW-MOLDTO-252-3, DPak (2 Leads + Tab), SC-63
Toshiba Semiconductor and Storage X34 PB-F VESM NCH S-MOS TRANSIST в производствеN-ChannelMOSFET (Metal Oxide)20V180mA (Ta)1.2V, 4V3 Ohm @ 50mA, 4V1V @ 1mA
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±10V9.5pF @ 3V
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150mW (Ta)150°CSMD Поверхностный монтажVESMSOT-723
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