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Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
Exar Corporation
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Honeywell Aerospace
Infineon Technologies
Intersil (Renesas Electronics America)
IXYS Corporation
IXYS Integrated Circuits Division
IXYS RF/Littelfuse
Littelfuse
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vicor
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
SSM3J132TU,LF
 Toshiba Semiconductor and Storage X34 PB-F SMALL LOW ON RESISTANCE в производствеP-ChannelMOSFET (Metal Oxide)12V5.4A (Ta)1.2V, 4.5V17 mOhm @ 5A, 4.5V1V @ 1mA33nC @ 4.5V±6V2700pF @ 10V
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500mW (Ta)150°CSMD Поверхностный монтажUFM3-SMD, Flat Leads
SSM6J771G,LF
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A 6WCSP в производствеP-ChannelMOSFET (Metal Oxide)20V5A (Ta)2.5V, 8.5V31 mOhm @ 3A, 8.5V1.2V @ 1mA, 3V9.8nC @ 4.5V±12V870pF @ 10V
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1.2W (Ta)150°C (TJ)SMD Поверхностный монтаж
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6-UFBGA, WLCSP
TPN4R712MD,L1Q
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 36A 8TSON ADV в производствеP-ChannelMOSFET (Metal Oxide)20V36A (Tc)2.5V, 4.5V4.7 mOhm @ 18A, 4.5V1.2V @ 1mA65nC @ 5V±12V4300pF @ 10V
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42W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPN11006NL,LQ
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8TSON в производствеN-ChannelMOSFET (Metal Oxide)60V17A (Tc)4.5V, 10V11.4 mOhm @ 8.5A, 10V2.5V @ 200µA23nC @ 10V±20V2000pF @ 30V
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700mW (Ta), 30W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPN4R303NL,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 63A 8TSON в производствеN-ChannelMOSFET (Metal Oxide)30V40A (Tc)4.5V, 10V4.3 mOhm @ 20A, 10V2.3V @ 200µA14.8nC @ 10V±20V1400pF @ 15V
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700mW (Ta), 34W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPN13008NH,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 80V 40A 8TSON в производствеN-ChannelMOSFET (Metal Oxide)80V18A (Tc)10V13.3 mOhm @ 9A, 10V4V @ 200µA18nC @ 10V±20V1600pF @ 40V
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700mW (Ta), 42W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPN1R603PL,L1Q
 Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR в производствеN-ChannelMOSFET (Metal Oxide)30V80A (Tc)4.5V, 10V1.2 mOhm @ 80A, 10V10V @ 10µA41nC @ 10V±20V3900pF @ 15V
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104W (Tc)175°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPH1R403NL,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 60A 8-SOP в производствеN-ChannelMOSFET (Metal Oxide)30V60A (Ta)4.5V, 10V1.4 mOhm @ 30A, 10V2.3V @ 500µA46nC @ 10V±20V4400pF @ 15V
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1.6W (Ta), 64W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TK290P60Y,RQ
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 11.5A DPAK в производствеN-ChannelMOSFET (Metal Oxide)600V11.5A (Tc)10V290 mOhm @ 5.8A, 10V4V @ 450µA25nC @ 10V±30V730pF @ 300V
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100W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TPHR9203PL,L1Q
 Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR в производствеN-ChannelMOSFET (Metal Oxide)30V150A (Tc)4.5V, 10V
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2.1V @ 500µA80nC @ 10V±20V7540pF @ 15V
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132W (Tc)175°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPH2R306NH,L1Q
 Toshiba Semiconductor and Storage MOSFET N CH 60V 60A SOP ADV в производствеN-ChannelMOSFET (Metal Oxide)60V60A (Tc)6.5V, 10V2.3 mOhm @ 30A, 10V4V @ 1mA72nC @ 10V±20V6100pF @ 30V
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1.6W (Ta), 78W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TK6A60D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 6A TO220SIS в производствеN-ChannelMOSFET (Metal Oxide)600V6A (Ta)10V1.25 Ohm @ 3A, 10V4V @ 1mA16nC @ 10V±30V800pF @ 25V
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40W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK13A60D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 13A TO220SIS в производствеN-ChannelMOSFET (Metal Oxide)600V13A (Ta)10V430 mOhm @ 6.5A, 10V4V @ 1mA40nC @ 10V±30V2300pF @ 25V
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50W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK9J90E,S1E
 Toshiba Semiconductor and Storage MOSFET N-CH 900V TO-3PN в производствеN-ChannelMOSFET (Metal Oxide)900V9A (Ta)10V1.3 Ohm @ 4.5A, 10V4V @ 900µA46nC @ 10V±30V2000pF @ 25V
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250W (Tc)150°C (TJ)Through HoleTO-3P(N)TO-3P-3, SC-65-3
SSM3K72CFS,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 0.17A в производствеN-ChannelMOSFET (Metal Oxide)60V170mA (Ta)4.5V, 10V3.9 Ohm @ 100mA, 10V2.1V @ 250µA0.35nC @ 4.5V±20V17pF @ 10V
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150mW (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSSMSC-75, SOT-416
SSM3J35CTC,L3F
 Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.25A CST3C в производствеP-ChannelMOSFET (Metal Oxide)20V250mA (Ta)1.2V, 4.5V1.4 Ohm @ 150mA, 4.5V1V @ 100µA
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±10V42pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажCST3CSOT-1123
SSM3K56ACT,L3F
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 1.4A CST3 в производствеN-ChannelMOSFET (Metal Oxide)20V1.4A (Ta)1.5V, 4.5V235 mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 4.5V±8V55pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажCST3SC-101, SOT-883
SSM3K56CT,L3F
 Toshiba Semiconductor and Storage MOSFET NCH 20V 800MA CST3 в производствеN-ChannelMOSFET (Metal Oxide)20V800mA (Ta)1.5V, 4.5V235 mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 4.5V±8V55pF @ 10V
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500mW (Ta)150°C (TA)SMD Поверхностный монтажCST33-XFDFN
SSM6J213FE(TE85L,F
 Toshiba Semiconductor and Storage MOSFET P CH 20V 2.6A ES6 в производствеP-ChannelMOSFET (Metal Oxide)20V2.6A (Ta)1.5V, 4.5V103 mOhm @ 1.5A, 4.5V1V @ 1mA4.7nC @ 4.5V±8V290pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажES6SOT-563, SOT-666
SSM6K217FE,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 1.8A ES6 в производствеN-ChannelMOSFET (Metal Oxide)40V1.8A (Ta)1.8V, 8V195 mOhm @ 1A, 8V1.2V @ 1mA1.1nC @ 4.2V±12V130pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажES6SOT-563, SOT-666
SSM3K59CTB,L3F
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 2A CST3B в производствеN-ChannelMOSFET (Metal Oxide)40V2A (Ta)1.8V, 8V215 mOhm @ 1A, 8V1.2V @ 1mA1.1nC @ 4.2V±12V130pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтажCST3B3-SMD, No Lead
SSM6H19NU,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 2A 6UDFN в производствеN-ChannelMOSFET (Metal Oxide)40V2A (Ta)1.8V, 8V185 mOhm @ 1A, 8V1.2V @ 1mA2.2nC @ 4.2V±12V130pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж6-UDFN (2x2)6-UDFN Exposed Pad
SSM6K504NU,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 9A UDFN6B в производствеN-ChannelMOSFET (Metal Oxide)30V9A (Ta)4.5V, 10V19.5 mOhm @ 4A, 10V2.5V @ 100µA4.8nC @ 4.5V±20V620pF @ 15V
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1.25W (Ta)150°C (TJ)SMD Поверхностный монтаж6-UDFNB (2x2)6-WDFN Exposed Pad
SSM6K211FE,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 3.2A ES6 в производствеN-ChannelMOSFET (Metal Oxide)20V3.2A (Ta)1.5V, 4.5V47 mOhm @ 2A, 4.5V1V @ 1mA10.8nC @ 4.5V±10V510pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажES6SOT-563, SOT-666
SSM6J215FE(TE85L,F
 Toshiba Semiconductor and Storage MOSFET P CH 20V 3.4A ES6 в производствеP-ChannelMOSFET (Metal Oxide)20V3.4A (Ta)1.5V, 4.5V59 mOhm @ 3A, 4.5V1V @ 1mA10.4nC @ 4.5V±8V630pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажES6SOT-563, SOT-666
SSM6K202FE,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 2.3A ES6 в производствеN-ChannelMOSFET (Metal Oxide)30V2.3A (Ta)1.8V, 4V85 mOhm @ 1.5A, 4V1V @ 1mA
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±12V270pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажES6 (1.6x1.6)SOT-563, SOT-666
TPH11003NL,LQ
 Toshiba Semiconductor and Storage MOSFET N CH 30V 32A 8SOP в производствеN-ChannelMOSFET (Metal Oxide)30V32A (Ta)4.5V, 10V11 mOhm @ 5.5A, 10V2.3V @ 100µA7.5nC @ 10V±20V660pF @ 15V
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1.6W (Ta), 21W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPN30008NH,LQ
 Toshiba Semiconductor and Storage MOSFET N-CH 80V 9.6A 8TSON в производствеN-ChannelMOSFET (Metal Oxide)80V9.6A (Tc)10V30 mOhm @ 4.8A, 10V4V @ 100µA11nC @ 10V±20V920pF @ 40V
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700mW (Ta), 27W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TPN7R506NH,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON в производствеN-ChannelMOSFET (Metal Oxide)60V26A (Tc)6.5V, 10V7.5 mOhm @ 13A, 10V4V @ 200µA22nC @ 10V±20V1800pF @ 30V
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700mW (Ta), 42W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TK50P04M1(T6RSS-Q)
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 50A DP TO252-3 в производствеN-ChannelMOSFET (Metal Oxide)40V50A (Ta)4.5V, 10V8.7 mOhm @ 25A, 10V2.3V @ 500µA38nC @ 10V±20V2600pF @ 10V
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60W (Tc)150°C (TJ)SMD Поверхностный монтажDPTO-252-3, DPak (2 Leads + Tab), SC-63
TPH14006NH,L1Q
 Toshiba Semiconductor and Storage MOSFET N CH 60V 14A 8-SOP ADV в производствеN-ChannelMOSFET (Metal Oxide)60V14A (Ta)6.5V, 10V14 mOhm @ 7A, 10V4V @ 200µA16nC @ 10V±20V1300pF @ 30V
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1.6W (Ta), 32W (Tc)150°C (TJ)SMD Поверхностный монтаж8-SOP Advance (5x5)8-PowerVDFN
TPN2R703NL,L1Q
 Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON в производствеN-ChannelMOSFET (Metal Oxide)30V45A (Tc)4.5V, 10V2.7 mOhm @ 22.5A, 10V2.3V @ 300µA21nC @ 10V±20V2100pF @ 15V
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700mW (Ta), 42W (Tc)150°C (TJ)SMD Поверхностный монтаж8-TSON Advance (3.3x3.3)8-PowerVDFN
TK7S10N1Z,LQ
 Toshiba Semiconductor and Storage MOSFET N-CH 100V 7A DPAK в производствеN-ChannelMOSFET (Metal Oxide)100V7A (Ta)10V48 mOhm @ 3.5A, 10V4V @ 100µA7.1nC @ 10V±20V470pF @ 10V
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50W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK33S10N1Z,LQ
 Toshiba Semiconductor and Storage MOSFET N-CH 100V 33A DPAK в производствеN-ChannelMOSFET (Metal Oxide)100V33A (Ta)10V9.7 mOhm @ 16.5A, 10V4V @ 500µA28nC @ 10V±20V2050pF @ 10V
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125W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK8P60W5,RVQ
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 8A DPAK в производствеN-ChannelMOSFET (Metal Oxide)600V8A (Ta)10V560 mOhm @ 4A, 10V4.5V @ 400µA22nC @ 10V±30V590pF @ 300V
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80W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TK7P65W,RQ
 Toshiba Semiconductor and Storage MOSFET N-CH 650V 6.8A DPAK в производствеN-ChannelMOSFET (Metal Oxide)650V6.8A (Ta)10V800 mOhm @ 3.4A, 10V3.5V @ 250µA15nC @ 10V±30V490pF @ 300V
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60W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TK5P60W,RVQ
 Toshiba Semiconductor and Storage MOSFET N CH 600V 5.4A DPAK в производствеN-ChannelMOSFET (Metal Oxide)600V5.4A (Ta)10V900 mOhm @ 2.7A, 10V3.7V @ 270µA10.5nC @ 10V±30V380pF @ 300VSuper Junction60W (Tc)150°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
TK65S04N1L,LQ
 Toshiba Semiconductor and Storage MOSFET N-CH 40V 65A DPAK в производствеN-ChannelMOSFET (Metal Oxide)40V65A (Ta)10V4.3 mOhm @ 32.5A, 10V2.5V @ 300µA39nC @ 10V±20V2550pF @ 10V
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107W (Tc)175°C (TJ)SMD Поверхностный монтажDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
TK20V60W5,LVQ
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A 5DFN в производствеN-ChannelMOSFET (Metal Oxide)600V20A (Ta)10V190 mOhm @ 10A, 10V4.5V @ 1mA55nC @ 10V±30V1800pF @ 300V
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156W (Tc)150°C (TJ)SMD Поверхностный монтаж4-DFN-EP (8x8)4-VSFN Exposed Pad
TK6A65D(STA4,Q,M)
 Toshiba Semiconductor and Storage MOSFET N-CH 650V 5A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)650V6A (Ta)10V1.11 Ohm @ 3A, 10V4V @ 1mA20nC @ 10V±30V1050pF @ 25V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK14N65W,S1F
 Toshiba Semiconductor and Storage MOSFET N-CH 650V 13.7A TO-220 в производствеN-ChannelMOSFET (Metal Oxide)650V13.7A (Ta)10V250 mOhm @ 6.9A, 10V3.5V @ 690µA35nC @ 10V±30V1300pF @ 300V
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130W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
TK100A10N1,S4X
 Toshiba Semiconductor and Storage MOSFET N-CH 100V 100A TO-220 в производствеN-ChannelMOSFET (Metal Oxide)100V100A (Tc)10V3.8 mOhm @ 50A, 10V4V @ 1mA140nC @ 10V±20V8800pF @ 50V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK25N60X,S1F
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-247 в производствеN-ChannelMOSFET (Metal Oxide)600V25A (Ta)10V125 mOhm @ 7.5A, 10V3.5V @ 1.2mA40nC @ 10V±30V2400pF @ 300V
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180W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
TK25A60X5,S5X
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-220SIS в производствеN-ChannelMOSFET (Metal Oxide)600V25A (Ta)10V140 mOhm @ 7.5A, 10V4.5V @ 1.2mA60nC @ 10V±30V2400pF @ 300V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
TK100E08N1,S1X
 Toshiba Semiconductor and Storage MOSFET N-CH 80V 100A TO220 в производствеN-ChannelMOSFET (Metal Oxide)80V100A (Ta)10V3.2 mOhm @ 50A, 10V4V @ 1mA130nC @ 10V±20V9000pF @ 40V
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255W (Tc)150°C (TJ)Through HoleTO-220TO-220-3
TK39N60X,S1F
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 38.8A TO-247 в производствеN-ChannelMOSFET (Metal Oxide)600V38.8A (Ta)10V65 mOhm @ 12.5A, 10V3.5V @ 1.9mA85nC @ 10V±30V4100pF @ 300VSuper Junction270W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
TK39A60W,S4VX
 Toshiba Semiconductor and Storage MOSFET N-CH 600V 39A TO220-3 в производствеN-ChannelMOSFET (Metal Oxide)600V38.8A (Ta)10V65 mOhm @ 19.4A, 10V3.7V @ 1.9mA110nC @ 10V±30V4100pF @ 300V
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50W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
SSM3K72CTC,L3F
 Toshiba Semiconductor and Storage MOSFET N-CH 60V 0.15A CST3C в производствеN-ChannelMOSFET (Metal Oxide)60V150mA (Ta)4.5V, 10V3.9 Ohm @ 100mA, 10V2.1V @ 250µA0.35nC @ 4.5V±20V17pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажCST3CSOT-1123
SSM6K403TU,LF
 Toshiba Semiconductor and Storage MOSFET N-CH 20V 4.2A в производствеN-ChannelMOSFET (Metal Oxide)20V4.2A (Ta)1.5V, 4V28 mOhm @ 3A, 4V1V @ 1mA16.8nC @ 4V±10V1050pF @ 10V
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500mW (Ta)150°C (TJ)SMD Поверхностный монтажUF66-SMD, Flat Leads
SSM6J502NU,LF(T
 Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A в производствеP-ChannelMOSFET (Metal Oxide)20V6A (Ta)1.5V, 4.5V23.1 mOhm @ 4A, 4.5V1V @ 1mA24.8nC @ 4.5V±8V1800pF @ 10V
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1W (Ta)150°C (TJ)SMD Поверхностный монтаж6-UDFNB (2x2)6-WDFN Exposed Pad
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