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Diodes Incorporated |
MOSFET P-CH 100V 1.3A SOT23-6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 6V, 10V | 350 mOhm @ 1.4A, 10V | 4V @ 250µA | 10.7nC @ 10V | ±20V | 424pF @ 50V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-26 | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 30V 11.5A POWERDI333 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 11.5A (Ta) | 4.5V, 10V | 10 mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | ±25V | 2246pF @ 15V | - | 940mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET P-CH 60V 4.4A DPAK |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 4.4A (Ta) | 4.5V, 10V | 125 mOhm @ 2.3A, 10V | 1V @ 250µA | 17.7nC @ 10V | ±20V | 637pF @ 30V | - | 2.11W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 70V 3.8A SOT-223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 70V | 2.7A (Ta) | 4.5V, 10V | 130 mOhm @ 4.4A, 10V | 1V @ 250µA | 7.4nC @ 10V | ±20V | 298pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 40V 50A TO252 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta), 50A (Tc) | 4.5V, 10V | 9.9 mOhm @ 9.8A, 10V | 2.5V @ 250µA | 91nC @ 10V | ±25V | 4234pF @ 20V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 40V 14A TO252 DPAK |
в производстве | P-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 4.5V, 10V | 11 mOhm @ 9.8A, 10V | 2.5V @ 250µA | 47.5nC @ 5V | ±25V | 4234pF @ 20V | - | 3.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 60V 0.28A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 10V | 5 Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 18V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET P-CH 100V 3A DPAK |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 3A (Ta) | 6V, 10V | 235 mOhm @ 2.1A, 10V | 4V @ 250µA | 16.5nC @ 10V | ±20V | 717pF @ 50V | - | 2.15W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 250V 0.205A SOT-89 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 250V | 205mA (Ta) | 3.5V, 10V | 14 Ohm @ 200mA, 10V | 2V @ 1mA | 3.45nC @ 10V | ±40V | 73pF @ 25V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-89-3 | TO-243AA |
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Diodes Incorporated |
MOSFET N-CH 200V 320MA SOT223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 320mA (Ta) | 3V, 5V | 10 Ohm @ 250mA, 5V | 1.5V @ 1mA | - | ±20V | 85pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 240V 0.2A SOT89 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 3.5V, 10V | 9 Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-89-3 | TO-243AA |
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Diodes Incorporated |
MOSFET N-CH 100V 600MA SOT223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 600mA (Ta) | 5V, 10V | 3 Ohm @ 500mA, 10V | 1.5V @ 1mA | - | ±20V | 75pF @ 25V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET BVDSS 41V 60V POWERDI333 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 80A (Tc) | 4.5V, 10V | 6 mOhm @ 20A, 10V | 2V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 2.2W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 11A |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 34A (Tc) | 4.5V, 10V | 10 mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±16V | 1925pF @ 30V | - | 2.08W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 150V 2A SOT223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 150V | 2A (Ta), 7.1A (Tc) | 5V, 10V | 310 mOhm @ 1.5A, 10V | 3V @ 250µA | 8.7nC @ 10V | ±20V | 405pF @ 25V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 100V 68.8A TO252 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 68.8A (Tc) | 6V, 10V | 8.8 mOhm @ 13A, 10V | 3V @ 250µA | 53.7nC @ 10V | ±20V | 2592pF @ 50V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 40V 6.6A DPAK |
в производстве | P-Channel | MOSFET (Metal Oxide) | 40V | 6.6A (Ta) | 4.5V, 10V | 60 mOhm @ 3.8A, 10V | 1V @ 250µA | 29.6nC @ 10V | ±20V | 965pF @ 20V | - | 2.15W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CHA 60V 100A DPAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.8 mOhm @ 90A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 3.9W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 2.9A SOT223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 2.9A (Ta) | 10V | 125 mOhm @ 2.9A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 859pF @ 50V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 60V 160MA TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 160mA (Ta) | 10V | 14 Ohm @ 200mA, 10V | 3.5V @ 1mA | - | ±20V | 50pF @ 18V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 5V, 10V | 5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET P-CH 100V 0.14A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 140mA (Ta) | 10V | 20 Ohm @ 150mA, 10V | 3.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 450MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 2 Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 18V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 10V | 4 Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 600MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 1 Ohm @ 1.5A, 10V | 3V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 5 Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 35pF @ 18V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 5V, 10V | 3 Ohm @ 500mA, 10V | 1.5V @ 1mA | - | ±20V | 75pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 200V 180MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 180mA (Ta) | 3V, 5V | 10 Ohm @ 250mA, 5V | 1.5V @ 1mA | - | ±20V | 85pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 200MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 200mA (Ta) | 10V | 10 Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 40pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 5 Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 10V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 40V 100A TO263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3 mOhm @ 100A, 10V | 4V @ 250µA | 68.6nC @ 10V | ±20V | 4305pF @ 25V | - | 4.7W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-263AB (D²PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 20V POWERDI5060-8 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 1.9 mOhm @ 25A, 10V | 1.4V @ 250µA | 585nC @ 10V | ±12V | 12826pF @ 10V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CH 100V 0.23A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 230mA (Ta) | 10V | 8 Ohm @ 375mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET P-CH 60V 280MA TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 10V | 5 Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 18V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET P-CH 240V 0.2A TO92-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 3.5V, 10V | 9 Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200pF @ 25V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 1.1A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 5V, 10V | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 850mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 0.9A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 900mA (Ta) | 5V, 10V | 500 mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 850mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 1.1A TO92-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 5V, 10V | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 850mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 300MA SC70-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 2 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 200mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.5A SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 4.5V, 10V | 5 Ohm @ 200mA, 10V | 3V @ 250µA | - | ±20V | 40pF @ 10V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 300MA SOT323 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 2 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 200mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET P-CH 30V 0.4A |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 400mA (Ta) | 4.5V, 10V | 2.4 Ohm @ 200mA, 10V | 2.3V @ 250µA | 4nC @ 10V | ±25V | 100pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X1-DFN1006-3 | 3-UFDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 540MA 3-DFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 540mA (Ta) | 5V, 10V | 2 Ohm @ 500mA, 10V | 2.5V @ 1mA | 0.87nC @ 10V | ±20V | 30.2pF @ 25V | - | 430mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X1-DFN1212-3 | 3-UDFN |
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Diodes Incorporated |
MOSFET N-CH 20V 0.9A DFN1212-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 900mA (Ta) | 1.5V, 4.5V | 600 mOhm @ 200mA, 4.5V | 1V @ 250µA | 500nC @ 4.5V | ±12V | 37pF @ 16V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X1-DFN1212-3 | 3-UDFN |
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Diodes Incorporated |
MOSFET N-CH 30V .22A X2-DFN0606- |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 220mA (Ta) | 1.2V, 4.5V | 1.5 Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.35nC @ 4.5V | ±12V | 22.2pF @ 15V | - | 393mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X2-DFN0606-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET P-CH 20V DFN1212-3 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 600mA (Ta) | 1.2V, 4.5V | 1 Ohm @ 100mA, 4.5V | 1V @ 250µA | 800nC @ 8V | ±8V | 46.1pF @ 10V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X1-DFN1212-3 | 3-UDFN |
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Diodes Incorporated |
MOSFET P-CH 50V 200MA 3DFN |
в производстве | P-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 2.5V, 4V | 6 Ohm @ 100mA, 4V | 1.2V @ 250µA | 0.58nC @ 4V | ±8V | 50.54pF @ 25V | - | 425mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
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Diodes Incorporated |
MOSFET N-CH 12V 3.2A DFN1010-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 3.2A (Ta) | 1.5V, 4.5V | 45 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | ±8V | 375pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X2-DFN1010-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 600V 50MA SC59 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 50mA (Ta) | 5V, 10V | 160 Ohm @ 16mA, 10V | 4.5V @ 250µA | 1.08nC @ 10V | ±20V | 21.8pF @ 25V | - | 610mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 440MA 3-DFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 440mA (Ta) | 1.5V, 4V | 1.5 Ohm @ 10mA, 4V | 1.2V @ 100µA | - | ±10V | - | - | 450mW (Ta) | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
