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Diodes Incorporated |
MOSFET P-CH 20V 2.9A 8DFN |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 2.9A (Ta) | 1.8V, 4.5V | 95 mOhm @ 2.8A, 4.5V | 1.3V @ 250µA | - | ±12V | 632pF @ 10V | Schottky Diode (Isolated) | 1.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-DFN3020B (3x2) | 8-VDFN Exposed Pad |
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Diodes Incorporated |
MOSFET P-CH 30V 3.1A TSOT26 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 2.5V, 10V | 75 mOhm @ 4.2A, 10V | 1.5V @ 250µA | 19.8nC @ 10V | ±12V | 839pF @ 15V | - | 1.15W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 20V 2.5A U-WLB1510-6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.5V, 4.5V | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 2.9nC @ 4.5V | ±8V | 210pF @ 10V | - | 920mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | U-WLB1510-6 | 6-UFBGA, WLBGA |
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Diodes Incorporated |
MOSFET N-CH 20V 1.2A SC59-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 2.5V, 4.5V | 100 mOhm @ 500mA, 4.5V | 1.4V @ 1mA | - | ±12V | 180pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET NCH 50V 500MA SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 500mA (Ta) | 4.5V, 10V | 1.8 Ohm @ 220mA, 10V | 1.5V @ 250µA | 0.8nC @ 10V | ±20V | 40pF @ 10V | - | 600mW (Ta), 920mW (Tc) | - | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 1.9A SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 1.9A (Ta) | 2.5V, 4.5V | 120 mOhm @ 4A, 4.5V | 700mV @ 250µA | 3nC @ 4.5V | ±12V | 303pF @ 15V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 30V 3.8A 8SO |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 70 mOhm @ 5.3A, 10V | 3V @ 250µA | 5.2nC @ 4.5V | ±20V | 563pF @ 25V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 60V SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 470mA (Ta) | 3V, 5V | 1.8 Ohm @ 150mA, 5V | 2V @ 1mA | 0.74nC @ 5V | ±12V | 12.9pF @ 12V | - | 390mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 12V 1.41A 3DFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 1.41A (Ta) | 1.8V, 4.5V | 150 mOhm @ 1A, 4.5V | 1V @ 250µA | 1.5nC @ 4.5V | ±6V | 106pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
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Diodes Incorporated |
MOSFET N-CH 12V 9.3A SC59 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 9.3A (Ta) | 1.2V, 2.5V | 10 mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | ±8V | 2426pF @ 10V | - | 680mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 60V 4.2A UDFN2020-6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 4.2A (Ta) | 4.5V, 10V | 110 mOhm @ 4.5A, 10V | 3V @ 250µA | 17.2nC @ 10V | ±20V | 969pF @ 30V | - | 1.97W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 30V 12A UDFN2020-6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 12 mOhm @ 11A, 10V | 2V @ 250µA | 25.1nC @ 10V | ±20V | 1415pF @ 15V | - | 2.02W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 20V 14.2A UDFN2020-6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 14.2A (Ta) | 1.5V, 4.5V | 9.5 mOhm @ 7A, 4.5V | 1V @ 250µA | 56nC @ 10V | ±12V | 2248pF @ 10V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 30V 6.6A TSOT26 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 6.6A (Ta) | 4.5V, 10V | 23 mOhm @ 6.5A, 10V | 2V @ 250µA | 12.5nC @ 10V | ±20V | 643pF @ 15V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 20V 3.1A SOT323 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 3.1A (Ta) | 1.5V, 4.5V | 56 mOhm @ 2A, 4.5V | 1V @ 250µA | 5.4nC @ 4.5V | ±12V | 400pF @ 10V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET P-CH 12V 4A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 31 mOhm @ 4A, 4.5V | 1V @ 250µA | 15.8nC @ 4.5V | ±8V | 1357pF @ 10V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 17.1A VDFN30308 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 17.1A (Ta), 46.2A (Tc) | 4.5V, 10V | 6.5 mOhm @ 12A, 10V | 3V @ 250µA | 22.6nC @ 10V | ±20V | 1320pF @ 15V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | V-DFN3030-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET P-CH 20V TSOT26 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2.5V, 4.5V | 45 mOhm @ 4.5A, 4.5V | 1.5V @ 250µA | 14.4nC @ 4.5V | ±8V | 1496pF @ 15V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 20V 2.5A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 130 mOhm @ 2.8A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | ±8V | 608pF @ 6V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 100V 3.6A SOT223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 3.6A (Ta) | 6V, 10V | 110 mOhm @ 3.3A, 10V | 3V @ 250µA | 10nC @ 10V | ±20V | 549pF @ 50V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 470mA (Ta) | 3V, 5V | 1.8 Ohm @ 150mA, 5V | 2V @ 1mA | 0.74nC @ 5V | ±12V | 12.9pF @ 12V | - | 390mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 12V 9.3A SC59 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 9.3A (Ta) | 1.2V, 2.5V | 10 mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | ±8V | 2426pF @ 10V | - | 680mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CHAN 25V 30V POWERDI333 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | - | - | - | 9.8nC @ 10V | ±20V | 500pF @ 15V | - | 900mW (Ta) | - | SMD Поверхностный монтаж | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 540MA 3DFN |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 540mA (Ta) | 1.8V, 4.5V | 1 Ohm @ 400mA, 4.5V | 1.1V @ 250µA | 0.9nC @ 4.5V | ±8V | 76pF @ 15V | - | 460mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X2-DFN1006-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 6.5A 8-SO |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 38 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 14.4nC @ 4.5V | ±8V | 1496pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CHAN 8V 24V X4-DSN1006- |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 1.8V, 8V | 78 mOhm @ 500mA, 8V | 1.2V @ 250µA | 1.6nC @ 4.5V | -12V | 228pF @ 10V | - | 810mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X4-DSN1006-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 9A 8-SOIC |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 18 mOhm @ 9A, 10V | 2.1V @ 250µA | 25nC @ 10V | ±25V | 741pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFETP-CHAN 450VSOT223 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 450V | 250mA (Tc) | 10V | 150 Ohm @ 50mA, 10V | 4V @ 250µA | 1.8nC @ 10V | ±30V | 59.2pF @ 25V | - | 13.9W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 30V 10.4A 8SO |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 10.4A (Ta) | 4.5V, 10V | 13 mOhm @ 10.4A, 10V | 2.2V @ 250µA | 45.7nC @ 10V | ±12V | 2296pF @ 15V | Schottky Diode (Body) | 1.55W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH30V SC-59 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 12V | 12.2A (Ta) | 2.5V, 4.5V | 8 mOhm @ 5A, 4.5V | 1V @ 250µA | 23.4nC @ 8V | ±8V | 995pF @ 6V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 40V 6-UDFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 40V | 8A (Ta) | 4.5V, 10V | 20 mOhm @ 8A, 10V | 2.4V @ 250µA | 19.1nC @ 10V | ±20V | 1060pF @ 20V | - | 660mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 60V 410MA 3DFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 410mA (Ta) | 4.5V, 10V | 1.4 Ohm @ 40mA, 10V | 2.3V @ 250µA | 2.8nC @ 10V | ±20V | 80pF @ 40V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
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Diodes Incorporated |
MOSFET N-CH 28V 1.6A SC70-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 28V | 1.6A (Ta) | 2.5V, 4.5V | 88 mOhm @ 1.6A, 4.5V | 1.4V @ 250µA | - | ±12V | 305pF @ 5V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET P-CH 20V 3A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 72 mOhm @ 3.5A, 4.5V | 1.25V @ 250µA | 7.3nC @ 4.5V | ±12V | 443pF @ 16V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 6A SC59-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 30 mOhm @ 6A, 10V | 2.1V @ 250µA | 10.5nC @ 5V | ±20V | 755pF @ 10V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 100V 2.6A TSOT26 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 2.6A (Ta) | 4.5V, 10V | 160 mOhm @ 5A, 10V | 3V @ 250µA | 9.7nC @ 10V | ±20V | 1167pF @ 25V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 30V 12.7A 8SO |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta) | 4.5V, 10V | 12.5 mOhm @ 11.7A, 10V | 2.3V @ 250µA | 43nC @ 10V | ±12V | 1849pF @ 15V | Schottky Diode (Body) | 1.54W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 100V 1.87A TSOT26 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 1.87A (Ta) | 4.5V, 10V | 220 mOhm @ 1.6A, 10V | 2.5V @ 250µA | 8.3nC @ 10V | ±16V | 401pF @ 25V | - | 1.67W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 30V 3A SC59 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 2.5V, 10V | 50 mOhm @ 4A, 10V | 1.3V @ 250µA | 25.1nC @ 10V | ±12V | 1326pF @ 15V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 8.1A UDFN2020-6 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 8.1A (Ta) | 1.5V, 4.5V | 29 mOhm @ 6.4A, 4.5V | 1V @ 250µA | 20.5nC @ 4.5V | ±8V | 1808pF @ 15V | - | 2.03W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET P-CH 20V 820MA 3DFN |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 820mA (Ta) | 1.5V, 4.5V | 495 mOhm @ 800mA, 4.5V | 1.2V @ 250µA | 3nC @ 4.5V | ±8V | 80pF @ 10V | - | 490mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X1-DFN1212-3 | 3-UDFN |
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Diodes Incorporated |
MOSFET P CH 30V 4.8A 8-SO |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 4.8A (Ta) | 4.5V, 10V | 45 mOhm @ 6A, 10V | 2V @ 250µA | 10.5nC @ 10V | ±25V | 620pF @ 15V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFETN-CH 60VSOT223 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Ta), 10A (Tc) | 4.5V, 10V | 69 mOhm @ 3A, 10V | 3V @ 250µA | 16nC @ 10V | ±20V | 825pF @ 30V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 20V 1.2A SC59-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 1.5V, 4.5V | 100 mOhm @ 500mA, 4.5V | 1.2V @ 1mA | - | ±8V | 220pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 7A UDFN2020-6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 2.5V, 10V | 28 mOhm @ 4A, 10V | 1.4V @ 250µA | 13.3nC @ 10V | ±12V | 570pF @ 15V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 30V 3.8A SOT23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 47 mOhm @ 3.2A, 10V | 3V @ 250µA | 7.7nC @ 10V | ±20V | 318pF @ 15V | - | 950mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 11.8A UDFN2020-6 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 11.8A (Ta) | 4.5V, 10V | 15 mOhm @ 7A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 706pF @ 15V | - | 2.03W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 25V 0.24A 3DFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 240mA (Ta) | 2.7V, 4.5V | 4 Ohm @ 400mA, 4.5V | 1.2V @ 250µA | 0.36nC @ 4.5V | 8V | 27.9pF @ 10V | - | 280mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X2-DFN0806-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 7.1A 8-SOIC |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 7.1A (Ta) | 2.5V, 10V | 30 mOhm @ 7.1A, 10V | 1.2V @ 250µA | - | ±12V | 555pF @ 5V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 30V 8.6A 8-SO |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 4.5V, 10V | 14 mOhm @ 9A, 10V | 1.6V @ 250µA | 8.7nC @ 5V | ±25V | 798pF @ 10V | - | 1.46W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
