IXYS Corporation агент по продажам - Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные - IXTQ36P15P IXTA3N120 - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип полевого транзистора	Технологии	Слив к источнику напряжения (Vdss)	Ток - непрерывный слив (Id) при 25 ° C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Макс.) @ Id, Vgs	Vgs (th) (Max) @ Id	Заряд затвора (Qg) (Макс.) @ Vgs	Vgs (Макс.)	Входная емкость (Ciss) (Макс.) @ Vds	Функция FET	Рассеиваемая мощность (макс.)	Рабочая Температура	Тип монтажа	Пакет устройств поставщика	Упаковка / чехол
IXTQ36P15P	IXYS	MOSFET P-CH 150V 36A TO-3P	в производстве	P-Channel	MOSFET (Metal Oxide)	150V	36A (Tc)	10V	110 mOhm @ 18A, 10V	4.5V @ 250µA	55nC @ 10V	±20V	3100pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTA3N120	IXYS	MOSFET N-CH 1.2KV 3A TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	1200V	3A (Tc)	10V	4.5 Ohm @ 1.5A, 10V	5V @ 250µA	42nC @ 10V	±20V	1350pF @ 25V	-	200W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTH10P50P	IXYS	MOSFET P-CH 500V 10A TO-247	в производстве	P-Channel	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	1 Ohm @ 5A, 10V	4V @ 250µA	50nC @ 10V	±20V	2840pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH26P20P	IXYS	MOSFET P-CH 200V 26A TO-247	в производстве	P-Channel	MOSFET (Metal Oxide)	200V	26A (Tc)	10V	170 mOhm @ 13A, 10V	4V @ 250µA	56nC @ 10V	±20V	2740pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFA20N85XHV	IXYS	850V/20A ULTRA JUNCTION X-CLASS	в производстве	N-Channel	MOSFET (Metal Oxide)	850V	20A (Tc)	10V	330 mOhm @ 500mA, 10V	5.5V @ 2.5mA	63nC @ 10V	±30V	1660pF @ 25V	-	540W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (D2Pak-HV)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFH42N50P2	IXYS	MOSFET N-CH 500V 42A TO247	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	42A (Tc)	10V	145 mOhm @ 500mA, 10V	4.5V @ 4mA	92nC @ 10V	±30V	5300pF @ 25V	-	830W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFQ50N60P3	IXYS	MOSFET N-CH 600V 50A TO3P	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	50A (Tc)	10V	145 mOhm @ 500mA, 10V	5V @ 4mA	94nC @ 10V	±30V	6300pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTH48N65X2	IXYS	MOSFET N-CH 650V 48A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	650V	48A (Tc)	10V	68 mOhm @ 24A, 10V	4.5V @ 4mA	77nC @ 10V	±30V	4420pF @ 25V	-	660W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFT36N50P	IXYS	MOSFET N-CH 500V 36A TO-268 D3	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	36A (Tc)	10V	170 mOhm @ 500mA, 10V	5V @ 4mA	93nC @ 10V	±30V	5500pF @ 25V	-	540W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-268	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXTH50P10	IXYS	MOSFET P-CH 100V 50A TO-247AD	в производстве	P-Channel	MOSFET (Metal Oxide)	100V	50A (Tc)	10V	55 mOhm @ 25A, 10V	5V @ 250µA	140nC @ 10V	±20V	4350pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFH340N075T2	IXYS	MOSFET N-CH 75V 340A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	75V	340A (Tc)	10V	3.2 mOhm @ 100A, 10V	4V @ 3mA	300nC @ 10V	±20V	19000pF @ 25V	-	935W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH76N07-11	IXYS	MOSFET N-CH 70V 76A TO-247AD	в производстве	N-Channel	MOSFET (Metal Oxide)	70V	76A (Tc)	10V	11 mOhm @ 40A, 10V	3.4V @ 4mA	240nC @ 10V	±20V	4400pF @ 25V	-	360W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTT48P20P	IXYS	MOSFET P-CH 200V 48A TO-268	в производстве	P-Channel	MOSFET (Metal Oxide)	200V	48A (Tc)	10V	85 mOhm @ 24A, 10V	4.5V @ 250µA	103nC @ 10V	±20V	5400pF @ 25V	-	462W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-268	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFH70N20Q3	IXYS	MOSFET N-CH 200V 70A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	70A (Tc)	10V	40 mOhm @ 35A, 10V	6.5V @ 4mA	67nC @ 10V	±20V	3150pF @ 25V	-	690W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH50N30Q3	IXYS	MOSFET N-CH 300V 50A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	300V	50A (Tc)	10V	80 mOhm @ 25A, 10V	6.5V @ 4mA	65nC @ 10V	±20V	3160pF @ 25V	-	690W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH7P50	IXYS	MOSFET P-CH 500V 7A TO-247AD	в производстве	P-Channel	MOSFET (Metal Oxide)	500V	7A (Tc)	10V	1.5 Ohm @ 500mA, 10V	5V @ 250µA	130nC @ 10V	±20V	3400pF @ 25V	-	180W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFH15N100Q3	IXYS	MOSFET N-CH 1000V 15A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	15A (Tc)	10V	1.05 Ohm @ 7.5A, 10V	6.5V @ 4mA	64nC @ 10V	±30V	3250pF @ 25V	-	690W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH400N075T2	IXYS	MOSFET N-CH 75V 400A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	75V	400A (Tc)	10V	2.3 mOhm @ 100A, 10V	4V @ 250µA	420nC @ 10V	±20V	24000pF @ 25V	-	1000W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH52N30Q	IXYS	MOSFET N-CH 300V 52A TO-247AD	в производстве	N-Channel	MOSFET (Metal Oxide)	300V	52A (Tc)	10V	60 mOhm @ 500mA, 10V	4V @ 4mA	150nC @ 10V	±20V	5300pF @ 25V	-	360W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH30N60L2	IXYS	MOSFET N-CH 600V 30A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	240 mOhm @ 15A, 10V	4.5V @ 250µA	335nC @ 10V	±20V	10700pF @ 25V	-	540W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTX102N65X2	IXYS	MOSFET N-CH 650V 102A X2 PLUS247	в производстве	N-Channel	MOSFET (Metal Oxide)	650V	102A (Tc)	10V	30 mOhm @ 51A, 10V	5V @ 250µA	152nC @ 10V	±30V	10900pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXTT30N60L2	IXYS	MOSFET N-CH 600V 30A TO-268	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	240 mOhm @ 15A, 10V	4.5V @ 250µA	335nC @ 10V	±20V	10700pF @ 25V	-	540W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-268	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFH15N80Q	IXYS	MOSFET N-CH 800V 15A TO-247AD	в производстве	N-Channel	MOSFET (Metal Oxide)	800V	15A (Tc)	10V	600 mOhm @ 7.5A, 10V	4.5V @ 4mA	90nC @ 10V	±20V	4300pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTX32P60P	IXYS	MOSFET P-CH 600V 32A PLUS247	в производстве	P-Channel	MOSFET (Metal Oxide)	600V	32A (Tc)	10V	350 mOhm @ 16A, 10V	4V @ 1mA	196nC @ 10V	±20V	11100pF @ 25V	-	890W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXTX40P50P	IXYS	MOSFET P-CH 500V 40A PLUS247	в производстве	P-Channel	MOSFET (Metal Oxide)	500V	40A (Tc)	10V	230 mOhm @ 20A, 10V	4V @ 1mA	205nC @ 10V	±20V	11500pF @ 25V	-	890W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXTK90P20P	IXYS	MOSFET P-CH 200V 90A TO-264	в производстве	P-Channel	MOSFET (Metal Oxide)	200V	90A (Tc)	10V	44 mOhm @ 500mA, 10V	4V @ 1mA	205nC @ 10V	±20V	12000pF @ 25V	-	890W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFX140N30P	IXYS	MOSFET N-CH 300V 140A PLUS 247	в производстве	N-Channel	MOSFET (Metal Oxide)	300V	140A (Tc)	10V	24 mOhm @ 70A, 10V	5V @ 8mA	185nC @ 10V	±20V	14800pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXFX94N50P2	IXYS	MOSFET N-CH 500V 94A PLUS247	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	94A (Tc)	10V	55 mOhm @ 500mA, 10V	5V @ 8mA	220nC @ 10V	±30V	13700pF @ 25V	-	1300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXFX120N20	IXYS	MOSFET N-CH 200V 120A PLUS247	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	120A (Tc)	10V	17 mOhm @ 60A, 10V	4V @ 8mA	300nC @ 10V	±20V	9100pF @ 25V	-	560W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXFX90N30	IXYS	MOSFET N-CH 300V 90A PLUS247	в производстве	N-Channel	MOSFET (Metal Oxide)	300V	90A (Tc)	10V	33 mOhm @ 45A, 10V	4V @ 8mA	360nC @ 10V	±20V	10000pF @ 25V	-	560W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXFB132N50P3	IXYS	MOSFET N-CH 500V 132A PLUS264	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	132A (Tc)	10V	39 mOhm @ 66A, 10V	5V @ 8mA	250nC @ 10V	±30V	18600pF @ 25V	-	1890W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXFK66N85X	IXYS	850V/66A ULTRA JUNCTION X-CLASS	в производстве	N-Channel	MOSFET (Metal Oxide)	850V	66A (Tc)	10V	65 mOhm @ 500mA, 10V	5.5V @ 8mA	230nC @ 10V	±30V	8900pF @ 25V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFB100N50P	IXYS	MOSFET N-CH 500V 100A PLUS264	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	100A (Tc)	10V	49 mOhm @ 50A, 10V	5V @ 8mA	240nC @ 10V	±30V	20000pF @ 25V	-	1890W (Tc)	-	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXFK44N60	IXYS	MOSFET N-CH 600V 44A TO-264AA	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	44A (Tc)	10V	130 mOhm @ 22A, 10V	4.5V @ 8mA	330nC @ 10V	±20V	8900pF @ 25V	-	560W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFB60N80P	IXYS	MOSFET N-CH 800V 60A PLUS264	в производстве	N-Channel	MOSFET (Metal Oxide)	800V	60A (Tc)	10V	140 mOhm @ 30A, 10V	5V @ 8mA	250nC @ 10V	±30V	18000pF @ 25V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXTX60N50L2	IXYS	MOSFET N-CH 500V 60A PLUS247	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	60A (Tc)	10V	100 mOhm @ 30A, 10V	4.5V @ 250µA	610nC @ 10V	±30V	24000pF @ 25V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3
IXFN110N60P3	IXYS	MOSFET N-CH 600V 90A SOT227	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	90A (Tc)	10V	56 mOhm @ 55A, 10V	5V @ 8mA	245nC @ 10V	±30V	18000pF @ 25V	-	1500W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN36N60	IXYS	MOSFET N-CH 600V 36A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	36A (Tc)	10V	180 mOhm @ 500mA, 10V	4.5V @ 8mA	325nC @ 10V	±20V	9000pF @ 25V	-	520W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN66N85X	IXYS	850V/65A ULTRA JUNCTION X-CLASS	в производстве	N-Channel	MOSFET (Metal Oxide)	850V	65A (Tc)	10V	65 mOhm @ 33A, 10V	5.5V @ 8mA	230nC @ 10V	±30V	8900pF @ 25V	-	830W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXKK85N60C	IXYS	MOSFET N-CH 600V 85A TO-264	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	85A (Tc)	10V	36 mOhm @ 55A, 10V	4V @ 4mA	650nC @ 10V	±20V	-	Super Junction	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264A	TO-264-3, TO-264AA
IXTT1N250HV	IXYS	MOSFET N-CH 2500V 1.5A TO-268HV	в производстве	N-Channel	MOSFET (Metal Oxide)	2500V	1.5A (Tc)	10V	40 Ohm @ 750mA, 10V	4V @ 250µA	41nC @ 10V	±20V	1660pF @ 25V	-	250W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-268	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFY26N30X3	IXYS	300V/26A ULTRA JUNCTION X3-CLASS	в производстве	N-Channel	MOSFET (Metal Oxide)	300V	26A (Tc)	10V	66 mOhm @ 13A, 10V	4.5V @ 500µA	22nC @ 10V	±20V	1.465nF @ 25V	-	170W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFY36N20X3	IXYS	200V/36A ULTRA JUNCTION X3-CLASS	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	36A (Tc)	10V	45 mOhm @ 18A, 10V	4.5V @ 500µA	21nC @ 10V	±20V	1425pF @ 25V	-	176W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFP26N30X3	IXYS	300V/26A ULTRA JUNCTION X3-CLASS	в производстве	N-Channel	MOSFET (Metal Oxide)	300V	26A (Tc)	10V	66 mOhm @ 13A, 10V	4.5V @ 500µA	22nC @ 10V	±20V	1.465nF @ 25V	-	170W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFP36N20X3	IXYS	200V/36A ULTRA JUNCTION X3-CLASS	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	36A (Tc)	10V	45 mOhm @ 18A, 10V	4.5V @ 500µA	21nC @ 10V	±20V	1425pF @ 25V	-	176W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFA270N06T3	IXYS	60V/270A TRENCHT3 HIPERFET MOSFE	в производстве	N-Channel	MOSFET (Metal Oxide)	60V	270A (Tc)	10V	3.1 mOhm @ 100A, 10V	4V @ 250µA	200nC @ 10V	±20V	12600pF @ 25V	-	480W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	TO-263AA	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA110N12T2	IXYS	120V/110A TRENCHT2 POWER MOSFET	в производстве	N-Channel	MOSFET (Metal Oxide)	120V	110A (Tc)	10V	14 mOhm @ 55A, 10V	4.5V @ 250µA	120nC @ 10V	±20V	6570pF @ 25V	-	517W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA140N12T2	IXYS	120V/140A TRENCHT2 POWER MOSFET	в производстве	N-Channel	MOSFET (Metal Oxide)	120V	140A (Tc)	10V	10 mOhm @ 70A, 10V	4.5V @ 250µA	174nC @ 10V	±20V	9700pF @ 25V	-	577W (Tc)	-55°C ~ 175°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFY30N25X3	IXYS	MOSFET N-CH 250V 30A TO252AA	в производстве	N-Channel	MOSFET (Metal Oxide)	250V	30A (Tc)	10V	60 mOhm @ 15A, 10V	4.5V @ 500µA	21nC @ 10V	±20V	1450pF @ 25V	-	176W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFH270N06T3	IXYS	60V/270A TRENCHT3 HIPERFET MOSFE	в производстве	N-Channel	MOSFET (Metal Oxide)	60V	270A (Tc)	10V	3.1 mOhm @ 100A, 10V	4V @ 250µA	200nC @ 10V	±20V	12600pF @ 25V	-	480W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3

Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные