1. Главная
  2. Продукты
  3. Дискретный полупроводник
  4. Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные
  5. Продукты

Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
Exar Corporation
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Honeywell Aerospace
Infineon Technologies
Intersil (Renesas Electronics America)
IXYS Corporation
IXYS Integrated Circuits Division
IXYS RF/Littelfuse
Littelfuse
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vicor
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораТехнологииСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsVgs (Макс.)Входная емкость (Ciss) (Макс.) @ VdsФункция FETРассеиваемая мощность (макс.)Рабочая ТемператураТип монтажаПакет устройств поставщикаУпаковка / чехол
BSC054N04NSGATMA1
 Infineon Technologies MOSFET N-CH 40V 81A TDSON-8 в производствеN-ChannelMOSFET (Metal Oxide)40V17A (Ta), 81A (Tc)10V5.4 mOhm @ 50A, 10V4V @ 27µA34nC @ 10V±20V2800pF @ 20V
-
2.5W (Ta), 57W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPG-TDSON-88-PowerTDFN
SI7619DN-T1-GE3
 Vishay Siliconix MOSFET P-CH 30V 24A 1212-8 PPAK в производствеP-ChannelMOSFET (Metal Oxide)30V24A (Tc)4.5V, 10V21 mOhm @ 10.5A, 10V3V @ 250µA50nC @ 10V±20V1350pF @ 15V
-
3.5W (Ta), 27.8W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® 1212-8PowerPAK® 1212-8
ZXMN6A08E6TA
 Diodes Incorporated MOSFET N-CH 60V 2.8A SOT23-6 в производствеN-ChannelMOSFET (Metal Oxide)60V2.8A (Ta)4.5V, 10V80 mOhm @ 4.8A, 10V1V @ 250µA5.8nC @ 10V±20V459pF @ 40V
-
1.1W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-26SOT-23-6
ZXMN3A03E6TA
 Diodes Incorporated MOSFET N-CH 30V 3.7A SOT-23-6 в производствеN-ChannelMOSFET (Metal Oxide)30V3.7A (Ta)4.5V, 10V50 mOhm @ 7.8A, 10V1V @ 250µA12.6nC @ 10V±20V600pF @ 25V
-
1.1W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6SOT-23-6
SI9433BDY-T1-E3
 Vishay Siliconix MOSFET P-CH 20V 4.5A 8-SOIC в производствеP-ChannelMOSFET (Metal Oxide)20V4.5A (Ta)2.7V, 4.5V40 mOhm @ 6.2A, 4.5V1.5V @ 250µA14nC @ 4.5V±12V
-
-
1.3W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
SI9435BDY-T1-E3
 Vishay Siliconix MOSFET P-CH 30V 4.1A 8-SOIC в производствеP-ChannelMOSFET (Metal Oxide)30V4.1A (Ta)4.5V, 10V42 mOhm @ 5.7A, 10V3V @ 250µA24nC @ 10V±20V
-
-
1.3W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
IRFL9014TRPBF
 Vishay Siliconix MOSFET P-CH 60V 1.8A SOT223 в производствеP-ChannelMOSFET (Metal Oxide)60V1.8A (Tc)10V500 mOhm @ 1.1A, 10V4V @ 250µA12nC @ 10V±20V270pF @ 25V
-
2W (Ta), 3.1W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223TO-261-4, TO-261AA
IRFR024NTRPBF
 Infineon Technologies MOSFET N-CH 55V 17A DPAK в производствеN-ChannelMOSFET (Metal Oxide)55V17A (Tc)10V75 mOhm @ 10A, 10V4V @ 250µA20nC @ 10V±20V370pF @ 25V
-
45W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажD-PakTO-252-3, DPak (2 Leads + Tab), SC-63
FDS6675BZ
 ON Semiconductor MOSFET P-CH 30V 8-SOIC в производствеP-ChannelMOSFET (Metal Oxide)30V11A (Ta)4.5V, 10V13 mOhm @ 11A, 10V3V @ 250µA62nC @ 10V±25V2470pF @ 15V
-
2.5W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
SISS27DN-T1-GE3
 Vishay Siliconix MOSFET P-CH 30V 50A PPAK 1212-8S в производствеP-ChannelMOSFET (Metal Oxide)30V50A (Tc)4.5V, 10V5.6 mOhm @ 15A, 10V2.2V @ 250µA140nC @ 10V±20V5250pF @ 15V
-
4.8W (Ta), 57W (Tc)-50°C ~ 150°C (TJ)SMD Поверхностный монтажPowerPAK® 1212-8S (3.3x3.3)8-PowerVDFN
FDMA6676PZ
 ON Semiconductor MOSFET P-CH 30V 11A в производствеP-ChannelMOSFET (Metal Oxide)30V11A (Ta)4.5V, 10V13.5 mOhm @ 11A, 10V2.6V @ 250µA46nC @ 10V±25V2160pF @ 15V
-
2.4W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-MicroFET (2x2)6-PowerWDFN
AON7528
 Alpha & Omega Semiconductor Inc. MOSFET N-CH 30V 45A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)30V45A (Ta), 50A (Tc)4.5V, 10V2 mOhm @ 20A, 10V2.2V @ 250µA60nC @ 10V±20V2895pF @ 15V
-
6.2W (Ta), 83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-DFN (3x3)8-PowerSMD, Flat Leads
SQ7414AEN-T1_GE3
 Vishay Siliconix MOSFET N-CH 60V 5.6A PPAK 1212-8 в производствеN-ChannelMOSFET (Metal Oxide)60V16A (Tc)4.5V, 10V26 mOhm @ 5.7A, 10V2.5V @ 250µA24nC @ 10V±20V980pF @ 30V
-
62W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажPowerPAK® 1212-8PowerPAK® 1212-8
NDT3055L
 ON Semiconductor MOSFET N-CH 60V 4A SOT-223-4 в производствеN-ChannelMOSFET (Metal Oxide)60V4A (Ta)4.5V, 10V100 mOhm @ 4A, 10V2V @ 250µA20nC @ 10V±20V345pF @ 25V
-
3W (Ta)-65°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223-4TO-261-4, TO-261AA
IRLL024NTRPBF
 Infineon Technologies MOSFET N-CH 55V 3.1A SOT223 в производствеN-ChannelMOSFET (Metal Oxide)55V3.1A (Ta)4V, 10V65 mOhm @ 3.1A, 10V2V @ 250µA15.6nC @ 5V±16V510pF @ 25V
-
1W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223TO-261-4, TO-261AA
CSD17308Q3
 Texas Instruments MOSFET N-CH 30V 47A 8SON в производствеN-ChannelMOSFET (Metal Oxide)30V14A (Ta), 44A (Tc)3V, 8V10.3 mOhm @ 10A, 8V1.8V @ 250µA5.1nC @ 4.5V+10V, -8V700pF @ 15V
-
2.7W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VSON-CLIP (3.3x3.3)8-PowerTDFN
IRF9328TRPBF
 Infineon Technologies MOSFET P-CH 30V 12A 8-SOIC в производствеP-ChannelMOSFET (Metal Oxide)30V12A (Tc)4.5V, 10V11.9 mOhm @ 12A, 10V2.4V @ 25µA52nC @ 10V±20V1680pF @ 25V
-
2.5W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
IRLR024NTRPBF
 Infineon Technologies MOSFET N-CH 55V 17A DPAK в производствеN-ChannelMOSFET (Metal Oxide)55V17A (Tc)4V, 10V65 mOhm @ 10A, 10V2V @ 250µA15nC @ 5V±16V480pF @ 25V
-
45W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажD-PakTO-252-3, DPak (2 Leads + Tab), SC-63
AON7262E
 Alpha & Omega Semiconductor Inc. MOSFET N-CH 60V 34A 8DFN в производствеN-ChannelMOSFET (Metal Oxide)60V21A (Ta), 34A (Tc)4.5V, 10V6.2 mOhm @ 20A, 10V2.2V @ 250µA45nC @ 10V±20V1650pF @ 30V
-
5W (Ta), 43W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-DFN-EP (3x3)8-PowerVDFN
BUK7Y12-40EX
 Nexperia USA Inc. MOSFET N-CH 40V 52A LFPAK в производствеN-ChannelMOSFET (Metal Oxide)40V52A (Tc)10V12 mOhm @ 15A, 10V4V @ 1mA15nC @ 10V±20V1039pF @ 25V
-
65W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажLFPAK56, Power-SO8SC-100, SOT-669, 4-LFPAK
AOD409
 Alpha & Omega Semiconductor Inc. MOSFET P-CH 60V 26A TO252 в производствеP-ChannelMOSFET (Metal Oxide)60V26A (Tc)4.5V, 10V40 mOhm @ 20A, 10V2.4V @ 250µA54nC @ 10V±20V3600pF @ 30V
-
2.5W (Ta), 60W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
STD18NF03L
 STMicroelectronics MOSFET N-CH 30V 17A DPAK в производствеN-ChannelMOSFET (Metal Oxide)30V17A (Tc)5V, 10V50 mOhm @ 8.5A, 10V2.2V @ 250µA6.5nC @ 5V±16V320pF @ 25V
-
30W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
IRF7465TRPBF
 Infineon Technologies MOSFET N-CH 150V 1.9A 8-SOIC в производствеN-ChannelMOSFET (Metal Oxide)150V1.9A (Ta)10V280 mOhm @ 1.14A, 10V5.5V @ 250µA15nC @ 10V±30V330pF @ 25V
-
2.5W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
SPD09P06PLGBTMA1
 Infineon Technologies MOSFET P-CH 60V 9.7A TO252-3 в производствеP-ChannelMOSFET (Metal Oxide)60V9.7A (Tc)4.5V, 10V250 mOhm @ 6.8A, 10V2V @ 250µA21nC @ 10V±20V450pF @ 25V
-
42W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажPG-TO252-3TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN011-60MLX
 Nexperia USA Inc. MOSFET N-CH 60V LFPAK33 в производствеN-ChannelMOSFET (Metal Oxide)60V61A (Tc)4.5V, 10V11.3 mOhm @ 15A, 10V2.45V @ 1mA37.2nC @ 10V±20V2191pF @ 30V
-
91W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажLFPAK33SOT-1210, 8-LFPAK33 (5-Lead)
FDS6670A
 ON Semiconductor MOSFET N-CH 30V 13A 8-SOIC в производствеN-ChannelMOSFET (Metal Oxide)30V13A (Ta)4.5V, 10V8 mOhm @ 13A, 10V3V @ 250µA30nC @ 5V±20V2220pF @ 15V
-
2.5W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
SI4425DDY-T1-GE3
 Vishay Siliconix MOSFET P-CH 30V 19.7A 8-SOIC в производствеP-ChannelMOSFET (Metal Oxide)30V19.7A (Tc)4.5V, 10V9.8 mOhm @ 13A, 10V2.5V @ 250µA80nC @ 10V±20V2610pF @ 15V
-
2.5W (Ta), 5.7W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
FDS6679AZ
 ON Semiconductor MOSFET P-CH 30V 13A 8-SOIC в производствеP-ChannelMOSFET (Metal Oxide)30V13A (Ta)4.5V, 10V9.3 mOhm @ 13A, 10V3V @ 250µA96nC @ 10V±25V3845pF @ 15V
-
2.5W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
FQD5P20TM
 ON Semiconductor MOSFET P-CH 200V 3.7A DPAK в производствеP-ChannelMOSFET (Metal Oxide)200V3.7A (Tc)10V1.4 Ohm @ 1.85A, 10V5V @ 250µA13nC @ 10V±30V430pF @ 25V
-
2.5W (Ta), 45W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажD-PakTO-252-3, DPak (2 Leads + Tab), SC-63
AON7423
 Alpha & Omega Semiconductor Inc. MOSFET P-CH 20V 28A 8DFN в производствеP-ChannelMOSFET (Metal Oxide)20V28A (Ta), 50A (Tc)1.5V, 4.5V5 mOhm @ 20A, 4.5V900mV @ 250µA100nC @ 4.5V±8V5626pF @ 10V
-
6.2W (Ta), 83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-DFN-EP (3.3x3.3)8-PowerWDFN
ZVN4525E6TA
 Diodes Incorporated MOSFET N-CH 250V 230MA SOT-23-6 в производствеN-ChannelMOSFET (Metal Oxide)250V230mA (Ta)2.4V, 10V8.5 Ohm @ 500mA, 10V1.8V @ 1mA3.65nC @ 10V±40V72pF @ 25V
-
1.1W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6SOT-23-6
SI3460BDV-T1-E3
 Vishay Siliconix MOSFET N-CH 20V 8A 6-TSOP в производствеN-ChannelMOSFET (Metal Oxide)20V8A (Tc)1.8V, 4.5V27 mOhm @ 5.1A, 4.5V1V @ 250µA24nC @ 8V±8V860pF @ 10V
-
2W (Ta), 3.5W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-TSOPSOT-23-6 Thin, TSOT-23-6
ZVP4525E6TA
 Diodes Incorporated MOSFET P-CH 250V 0.197A SOT-23-6 в производствеP-ChannelMOSFET (Metal Oxide)250V197mA (Ta)3.5V, 10V14 Ohm @ 200mA, 10V2V @ 1mA3.45nC @ 10V±40V73pF @ 25V
-
1.1W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6SOT-23-6
FDT457N
 ON Semiconductor MOSFET N-CH 30V 5A SOT-223 в производствеN-ChannelMOSFET (Metal Oxide)30V5A (Ta)4.5V, 10V60 mOhm @ 5A, 10V3V @ 250µA5.9nC @ 5V±20V235pF @ 15V
-
3W (Ta)-65°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223-4TO-261-4, TO-261AA
NVTFS5826NLTAG
 ON Semiconductor MOSFET N-CH 60V 20A 8WDFN устарелыйN-ChannelMOSFET (Metal Oxide)60V7.6A (Ta)4.5V, 10V24 mOhm @ 10A, 10V2.5V @ 250µA16nC @ 10V±20V850pF @ 25V
-
3.2W (Ta), 22W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-WDFN (3.3x3.3)8-PowerWDFN
ZXMN4A06GTA
 Diodes Incorporated MOSFET N-CH 40V 5A SOT223 в производствеN-ChannelMOSFET (Metal Oxide)40V5A (Ta)4.5V, 10V50 mOhm @ 4.5A, 10V1V @ 250µA18.2nC @ 10V±20V770pF @ 40V
-
2W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223TO-261-4, TO-261AA
IRLL3303TRPBF
 Infineon Technologies MOSFET N-CH 30V 4.6A SOT223 в производствеN-ChannelMOSFET (Metal Oxide)30V4.6A (Ta)4.5V, 10V31 mOhm @ 4.6A, 10V1V @ 250µA50nC @ 10V±16V840pF @ 25V
-
1W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223TO-261-4, TO-261AA
CSD17551Q3A
 Texas Instruments MOSFET N-CH 30V 12A 8VSON устарелыйN-ChannelMOSFET (Metal Oxide)30V12A (Tc)4.5V, 10V9 mOhm @ 11A, 10V2.1V @ 250µA7.8nC @ 4.5V±20V1370pF @ 15V
-
2.6W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SON (3.3x3.3)8-PowerVDFN
PSMN3R0-30YL,115
 Nexperia USA Inc. MOSFET N-CH 30V 100A LFPAK в производствеN-ChannelMOSFET (Metal Oxide)30V100A (Tc)4.5V, 10V3 mOhm @ 15A, 10V2.15V @ 1mA45.8nC @ 10V±20V2822pF @ 12V
-
81W (Tc)-55°C ~ 175°C (TJ)SMD Поверхностный монтажLFPAK56, Power-SO8SC-100, SOT-669, 4-LFPAK
AON6407
 Alpha & Omega Semiconductor Inc. MOSFET P-CH 30V 32A 8DFN в производствеP-ChannelMOSFET (Metal Oxide)30V32A (Ta), 85A (Tc)6V, 10V4.5 mOhm @ 20A, 10V2.6V @ 250µA105nC @ 10V±25V3505pF @ 15V
-
7.3W (Ta), 83W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-DFN (5x6)8-PowerSMD, Flat Leads
BUK9875-100A/CUX
 Nexperia USA Inc. MOSFET N-CH 100V 7A SOT223 в производствеN-ChannelMOSFET (Metal Oxide)100V7A (Tc)4.5V, 10V72 mOhm @ 8A, 10V2V @ 1mA
-
±10V1690pF @ 25V
-
8W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223TO-261-4, TO-261AA
IRLL2705TRPBF
 Infineon Technologies MOSFET N-CH 55V 3.8A SOT223 в производствеN-ChannelMOSFET (Metal Oxide)55V3.8A (Ta)4V, 10V40 mOhm @ 3.8A, 10V2V @ 250µA48nC @ 10V±16V870pF @ 25V
-
1W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223TO-261-4, TO-261AA
IRF9317TRPBF
 Infineon Technologies MOSFET P-CH 30V 16A 8-SOIC в производствеP-ChannelMOSFET (Metal Oxide)30V16A (Ta)4.5V, 10V6.6 mOhm @ 16A, 10V2.4V @ 50µA92nC @ 10V±20V2820pF @ 15V
-
2.5W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
IRF7404TRPBF
 Infineon Technologies MOSFET P-CH 20V 6.7A 8-SOIC в производствеP-ChannelMOSFET (Metal Oxide)20V6.7A (Ta)2.7V, 4.5V40 mOhm @ 3.2A, 4.5V700mV @ 250µA50nC @ 4.5V±12V1500pF @ 15V
-
2.5W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
SI4431BDY-T1-E3
 Vishay Siliconix MOSFET P-CH 30V 5.7A 8-SOIC в производствеP-ChannelMOSFET (Metal Oxide)30V5.7A (Ta)4.5V, 10V30 mOhm @ 7.5A, 10V3V @ 250µA20nC @ 5V±20V
-
-
1.5W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SO8-SOIC (0.154", 3.90mm Width)
BSC110N06NS3GATMA1
 Infineon Technologies MOSFET N-CH 60V 50A TDSON-8 в производствеN-ChannelMOSFET (Metal Oxide)60V50A (Tc)10V11 mOhm @ 50A, 10V4V @ 23µA33nC @ 10V±20V2700pF @ 30V
-
2.5W (Ta), 50W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPG-TDSON-88-PowerTDFN
BSZ0902NSATMA1
 Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8 в производствеN-ChannelMOSFET (Metal Oxide)30V19A (Ta), 40A (Tc)4.5V, 10V2.6 mOhm @ 20A, 10V2V @ 250µA26nC @ 10V±20V1700pF @ 15V
-
2.1W (Ta), 48W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажPG-TSDSON-8-FL8-PowerTDFN
SUD09P10-195-GE3
 Vishay Siliconix MOSFET P-CH 100V 8.8A DPAK в производствеP-ChannelMOSFET (Metal Oxide)100V8.8A (Tc)4.5V, 10V195 mOhm @ 3.6A, 10V2.5V @ 250µA34.8nC @ 10V±20V1055pF @ 50V
-
2.5W (Ta), 32.1W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252, (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
FDMA8051L
 ON Semiconductor MOSFET N-CH 40V 6-MLP в производствеN-ChannelMOSFET (Metal Oxide)40V10A (Tc)4.5V, 10V14 mOhm @ 10A, 10V3V @ 250µA20nC @ 10V±20V1260pF @ 20V
-
2.4W (Ta)-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-MicroFET (2x2)6-WDFN Exposed Pad
BUK9832-55A/CUX
 Nexperia USA Inc. MOSFET N-CH 55V 12A SOT223 в производствеN-ChannelMOSFET (Metal Oxide)55V12A (Tc)4.5V, 10V29 mOhm @ 8A, 10V2V @ 1mA
-
±10V1594pF @ 25V
-
8W (Tc)-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-223TO-261-4, TO-261AA
  1. 4
  2. 5
  3. 6
  4. 7
  5. 8
  6. 9
  7. 10
  8. 11
  9. 12
  10. 13
Email: sales@icchip.ru
Copyright © 2019 ICCHIP ® Все права защищены