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IXYS |
MOSFET P-CH 600V 16A TO-268 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 720 mOhm @ 500mA, 10V | 4.5V @ 250µA | 92nC @ 10V | ±20V | 5120pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET P-CH 500V 20A TO-268 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 450 mOhm @ 10A, 10V | 4V @ 250µA | 103nC @ 10V | ±20V | 5120pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 200V 58A TO-247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 58A (Tc) | 10V | 40 mOhm @ 29A, 10V | 4V @ 4mA | 220nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 64A TO264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 64A (Tc) | 10V | 95 mOhm @ 32A, 10V | 5V @ 4mA | 145nC @ 10V | ±30V | 9900pF @ 25V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 13A TO-247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 800 mOhm @ 500mA, 10V | 4.5V @ 4mA | 155nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 170A TO-264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 170A (Tc) | 10V | 11 mOhm @ 60A, 10V | 5V @ 4mA | 265nC @ 10V | ±20V | 19600pF @ 25V | - | 1150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
300V/120A ULTRA JUNCTION X3-CLAS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 11 mOhm @ 60A, 10V | 4.5V @ 4mA | 170nC @ 10V | ±20V | 10.5nF @ 25V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 2500V 0.2A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 2500V | 200mA (Tc) | 10V | 450 Ohm @ 50mA, 10V | 4.5V @ 250µA | 7.4nC @ 10V | ±20V | 116pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 98A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 98A (Tc) | 10V | 50 mOhm @ 500mA, 10V | 5V @ 8mA | 197nC @ 10V | ±30V | 13100pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 80A TO264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 80A (Tc) | 10V | 70 mOhm @ 500mA, 10V | 5V @ 8mA | 190nC @ 10V | ±30V | 13100pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 100V 75A TO-247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 20 mOhm @ 37.5A, 10V | 4V @ 4mA | 260nC @ 10V | ±20V | 4500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 100A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 100A (Tc) | 10V | 30 mOhm @ 50A, 10V | 5.5V @ 4mA | 180nC @ 10V | ±30V | 11300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1KV 12A TO-247AD |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 1.05 Ohm @ 6A, 10V | 4.5V @ 4mA | 155nC @ 10V | ±20V | 4000pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 44A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 44A (Tc) | 10V | 190 mOhm @ 22A, 10V | 5V @ 8mA | 198nC @ 10V | ±30V | 12000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET P-CH 500V 40A TO-264 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 230 mOhm @ 20A, 10V | 4V @ 1mA | 205nC @ 10V | ±20V | 11500pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 150V 240A TO264 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 150V | 240A (Tc) | 10V | 5.2 mOhm @ 60A, 10V | 5V @ 8mA | 460nC @ 10V | ±20V | 32000pF @ 25V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET P-CH 100V 108A ISOPLUS247 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 108A (Tc) | 10V | 13 mOhm @ 85A, 10V | 4V @ 1mA | 240nC @ 10V | ±20V | 12600pF @ 25V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 100V 180A TO-264AA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 8 mOhm @ 90A, 10V | 4V @ 8mA | 390nC @ 10V | ±20V | 10900pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 48A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 100 mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 7000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 150A SOT-227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 150V | 150A (Tc) | 10V | 11 mOhm @ 90A, 10V | 5V @ 4mA | 240nC @ 10V | ±20V | 7000pF @ 25V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 200V 120A TO-264AA |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 120A (Tc) | 10V | 17 mOhm @ 60A, 10V | 4V @ 8mA | 300nC @ 10V | ±20V | 9100pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 300V 130A SOT227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 130A (Tc) | 10V | 19 mOhm @ 60A, 10V | 5V @ 8mA | 335nC @ 10V | ±20V | 28000pF @ 25V | - | 900W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 800V 34A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 34A (Tc) | 10V | 240 mOhm @ 17A, 10V | 5V @ 8mA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 170V 320A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 170V | 320A (Tc) | 10V | 5.2 mOhm @ 60A, 10V | 5V @ 8mA | 640nC @ 10V | ±20V | 45000pF @ 25V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 106A SOT-227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 106A (Tc) | 10V | 20 mOhm @ 500mA, 10V | 4V @ 8mA | 380nC @ 10V | ±20V | 9000pF @ 25V | - | 521W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET P-CH 500V 40A SOT227 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 230 mOhm @ 500mA, 10V | 4V @ 1mA | 205nC @ 10V | ±20V | 11500pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 250V 240A PLUS247-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 240A (Tc) | 10V | 5 mOhm @ 120A, 10V | 4.5V @ 8mA | 345nC @ 10V | ±20V | 23800pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
200V/300A ULTRA JUNCTION X3-CLAS |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 300A (Tc) | 10V | 4 mOhm @ 150A, 10V | 4.5V @ 8mA | 375nC @ 10V | ±20V | 23800pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 53A SOT-227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 800V | 53A (Tc) | 10V | 140 mOhm @ 30A, 10V | 5V @ 8mA | 250nC @ 10V | ±30V | 18000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 200V 120A SOT-227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 120A (Tc) | 10V | 17 mOhm @ 500mA, 10V | 4V @ 8mA | 360nC @ 10V | ±20V | 9100pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 90A SOT-227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 90A (Tc) | 10V | 49 mOhm @ 50A, 10V | 5V @ 8mA | 240nC @ 10V | ±30V | 20000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 250V 90A PLUS247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 90A (Tc) | 10V | 33 mOhm @ 45A, 10V | 4.5V @ 3mA | 640nC @ 10V | ±20V | 23000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 145A SOT-227 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 145A (Tc) | 10V | 17 mOhm @ 75A, 10V | 5V @ 8mA | 355nC @ 10V | ±30V | 21000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1KV 36A SOT-227B |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 36A (Tc) | 10V | 240 mOhm @ 500mA, 10V | 5V @ 8mA | 380nC @ 10V | ±20V | 9200pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET P-CH 100V 18A TO-220 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 120 mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | ±15V | 2100pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 55V 200A TO-263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 55V | 200A (Tc) | 10V | 4.2 mOhm @ 50A, 10V | 4V @ 250µA | 109nC @ 10V | ±20V | 6800pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | SMD Поверхностный монтаж | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 3A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | - | 1.5 Ohm @ 1.5A, 0V | - | 40nC @ 5V | ±20V | 1070pF @ 25V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 10A D2-PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 740 mOhm @ 5A, 10V | 5.5V @ 1mA | 32nC @ 10V | ±30V | 1610pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 100V 130A TO-3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1 mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | ±20V | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 300V 36A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 36A (Tc) | 10V | 110 mOhm @ 18A, 10V | 5.5V @ 250µA | 70nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 16A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 400 mOhm @ 8A, 10V | 5.5V @ 2.5mA | 43nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 50A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 250V | 50A (Tc) | 10V | 50 mOhm @ 25A, 10V | 5V @ 1mA | 78nC @ 10V | ±30V | 4000pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 22A TO-263 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 160 mOhm @ 11A, 10V | 5.5V @ 1.5mA | 38nC @ 10V | ±30V | 2310pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 100V 160A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 10V | 7 mOhm @ 25A, 10V | 4.5V @ 250µA | 132nC @ 10V | ±30V | 6600pF @ 25V | - | 430W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 16A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 400 mOhm @ 8A, 10V | 5.5V @ 2.5mA | 43nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1KV .1A TO-220AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 100mA (Tc) | - | 110 Ohm @ 50mA, 0V | - | - | ±20V | 120pF @ 25V | Depletion Mode | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 180A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.4 mOhm @ 25A, 10V | 4.5V @ 250µA | 151nC @ 10V | ±30V | 6900pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET P-CH 150V 36A TO-263 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 150V | 36A (Tc) | 10V | 110 mOhm @ 18A, 10V | 4.5V @ 250µA | 55nC @ 10V | ±20V | 3100pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 300V 52A TO-3P |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 52A (Tc) | 10V | 66 mOhm @ 26A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 3490pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 650V 34A TO-220 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 34A (Tc) | 10V | 105 mOhm @ 17A, 10V | 5.5V @ 2.5mA | 56nC @ 10V | ±30V | 3330pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
