IXYS Corporation агент по продажам - Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные - IXTK200N10L2 IXFN132N50P3 - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип полевого транзистора	Технологии	Слив к источнику напряжения (Vdss)	Ток - непрерывный слив (Id) при 25 ° C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Макс.) @ Id, Vgs	Vgs (th) (Max) @ Id	Заряд затвора (Qg) (Макс.) @ Vgs	Vgs (Макс.)	Входная емкость (Ciss) (Макс.) @ Vds	Функция FET	Рассеиваемая мощность (макс.)	Рабочая Температура	Тип монтажа	Пакет устройств поставщика	Упаковка / чехол
IXTK200N10L2	IXYS	MOSFET N-CH 100V 200A TO-264	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	11 mOhm @ 100A, 10V	4.5V @ 3mA	540nC @ 10V	±20V	23000pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFN132N50P3	IXYS	MOSFET N-CH 500V 112A SOT227	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	112A (Tc)	10V	39 mOhm @ 66A, 10V	5V @ 8mA	250nC @ 10V	±30V	18600pF @ 25V	-	1500W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN27N80	IXYS	MOSFET N-CH 800V 27A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	800V	27A (Tc)	10V, 15V	300 mOhm @ 13.5A, 10V	4.5V @ 8mA	400nC @ 10V	±20V	9740pF @ 25V	-	520W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN26N90	IXYS	MOSFET N-CH 900V 26A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	900V	26A (Tc)	10V	300 mOhm @ 13A, 10V	5V @ 8mA	240nC @ 10V	±20V	10800pF @ 25V	-	600W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN360N15T2	IXYS	MOSFET N-CH 150V 310A SOT227	в производстве	N-Channel	MOSFET (Metal Oxide)	150V	310A (Tc)	10V	4 mOhm @ 60A, 10V	5V @ 8mA	715nC @ 10V	±20V	47500pF @ 25V	-	1070W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN320N17T2	IXYS	MOSFET N-CH 170V 260A SOT227	в производстве	N-Channel	MOSFET (Metal Oxide)	170V	260A (Tc)	10V	5.2 mOhm @ 60A, 10V	5V @ 8mA	640nC @ 10V	±20V	45000pF @ 25V	-	1070W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTF02N450	IXYS	MOSFET N-CH 4500V 0.2A I4PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	4500V	200mA (Tc)	10V	750 Ohm @ 10mA, 10V	6.5V @ 250µA	10.4nC @ 10V	±20V	256pF @ 25V	-	78W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™	i4-Pac™-5 (3 Leads)
IXTN90N25L2	IXYS	MOSFET N-CH 250V 90A SOT-227	в производстве	N-Channel	MOSFET (Metal Oxide)	250V	90A (Tc)	10V	33 mOhm @ 500mA, 10V	4.5V @ 3mA	640nC @ 10V	±20V	23000pF @ 25V	-	735W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN340N07	IXYS	MOSFET N-CH 70V 340A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	70V	340A (Tc)	10V	4 mOhm @ 100A, 10V	4V @ 8mA	490nC @ 10V	±20V	12200pF @ 25V	-	700W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXKN75N60C	IXYS	MOSFET N-CH 600V 75A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	75A (Tc)	10V	36 mOhm @ 50A, 10V	3.9V @ 5mA	500nC @ 10V	±20V	-	Super Junction	560W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFB70N60Q2	IXYS	MOSFET N-CH 600V 70A PLUS264	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	70A (Tc)	10V	88 mOhm @ 35A, 10V	5.5V @ 8mA	265nC @ 10V	±30V	12000pF @ 25V	-	890W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXFN230N10	IXYS	MOSFET N-CH 100V 230A SOT-227B	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	230A (Tc)	10V	6 mOhm @ 500mA, 10V	4V @ 8mA	570nC @ 10V	±20V	19000pF @ 25V	-	700W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN22N100L	IXYS	MOSFET N-CH 1000V 22A SOT-227	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	22A (Tc)	20V	600 mOhm @ 11A, 20V	5.5V @ 250µA	270nC @ 15V	±30V	7050pF @ 25V	-	700W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTF1N450	IXYS	MOSFET N-CH 4500V 0.9A I4PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	4500V	900mA (Tc)	10V	85 Ohm @ 50mA, 10V	6.5V @ 250µA	40nC @ 10V	±20V	1730pF @ 25V	-	160W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™	i4-Pac™-5 (3 Leads)
IXTK5N250	IXYS	MOSFET N-CH 2500V 5A TO264	в производстве	N-Channel	MOSFET (Metal Oxide)	2500V	5A (Tc)	10V	8.8 Ohm @ 2.5A, 10V	5V @ 1mA	200nC @ 10V	±30V	8560pF @ 25V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTL2N450	IXYS	MOSFET N-CH 4500V 2A I5PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	4500V	2A (Tc)	10V	23 Ohm @ 1A, 10V	6V @ 250µA	156nC @ 10V	±20V	6900pF @ 25V	-	220W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUSi5-Pak™	ISOPLUSi5-Pak™
VMO580-02F	IXYS	MOSFET N-CH 200V 580A MODULE	в производстве	N-Channel	MOSFET (Metal Oxide)	200V	580A (Tc)	10V	3.8 mOhm @ 430A, 10V	4V @ 50mA	2750nC @ 10V	±20V	-	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-Li	Y3-Li
VMO1200-01F	IXYS	MOSFET N-CH 100V 1245A Y3-LI	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	1220A (Tc)	10V	1.35 mOhm @ 932A, 10V	4V @ 64mA	2520nC @ 10V	±20V	-	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-Li	Y3-Li
IXTY08N50D2	IXYS	MOSFET N-CH 500V 800MA DPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	800mA (Tc)	-	4.6 Ohm @ 400mA, 0V	-	12.7nC @ 5V	±20V	312pF @ 25V	Depletion Mode	60W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTA08N100D2	IXYS	MOSFET N-CH 1000V 800MA D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	800mA (Tc)	-	21 Ohm @ 400mA, 0V	-	14.6nC @ 5V	±20V	325pF @ 25V	Depletion Mode	60W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTY1R6N50D2	IXYS	MOSFET N-CH 500V 1.6A DPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	1.6A (Tc)	-	2.3 Ohm @ 800mA, 0V	-	23.7nC @ 5V	±20V	645pF @ 25V	Depletion Mode	100W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY08N100D2	IXYS	MOSFET N-CH 1000V 800MA DPAK	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	800mA (Tc)	-	21 Ohm @ 400mA, 0V	-	14.6nC @ 5V	±20V	325pF @ 25V	Depletion Mode	60W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP80N10T	IXYS	MOSFET N-CH 100V 80A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	14 mOhm @ 25A, 10V	5V @ 100µA	60nC @ 10V	±20V	3040pF @ 25V	-	230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP130N10T	IXYS	MOSFET N-CH 100V 130A TO-220	в производстве	N-Channel	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	9.1 mOhm @ 25A, 10V	4.5V @ 250µA	104nC @ 10V	±30V	5080pF @ 25V	-	360W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA06N120P	IXYS	MOSFET N-CH 1200V 0.6A TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	1200V	600mA (Tc)	10V	32 Ohm @ 300mA, 10V	4.5V @ 50µA	13.3nC @ 10V	±20V	270pF @ 25V	-	42W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA3N120TRL	IXYS	MOSFET N-CH 1200V 3A TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	1200V	3A (Tc)	10V	4.5 Ohm @ 1.5A, 10V	5V @ 250µA	42nC @ 10V	±20V	1350pF @ 25V	-	200W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA36N30P	IXYS	MOSFET N-CH 300V 36A TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	300V	36A (Tc)	10V	110 mOhm @ 18A, 10V	5.5V @ 250µA	70nC @ 10V	±30V	2250pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP96P085T	IXYS	MOSFET P-CH 85V 96A TO-220	в производстве	P-Channel	MOSFET (Metal Oxide)	85V	96A (Tc)	10V	13 mOhm @ 48A, 10V	4V @ 250µA	180nC @ 10V	±15V	13100pF @ 25V	-	298W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFH22N60P3	IXYS	MOSFET N-CH 600V 22A TO247	в производстве	N-Channel	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	360 mOhm @ 11A, 10V	5V @ 1.5mA	38nC @ 10V	±30V	2600pF @ 25V	-	500W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTA96P085T	IXYS	MOSFET P-CH 85V 96A TO-263	в производстве	P-Channel	MOSFET (Metal Oxide)	85V	96A (Tc)	10V	13 mOhm @ 48A, 10V	4V @ 250µA	180nC @ 10V	±15V	13100pF @ 25V	-	298W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA76P10T	IXYS	MOSFET P-CH 100V 76A TO-263	в производстве	P-Channel	MOSFET (Metal Oxide)	100V	76A (Tc)	10V	25 mOhm @ 500mA, 10V	4V @ 250µA	197nC @ 10V	±15V	13700pF @ 25V	-	298W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA52P10P	IXYS	MOSFET P-CH 100V 52A TO-263	в производстве	P-Channel	MOSFET (Metal Oxide)	100V	52A (Tc)	10V	50 mOhm @ 500mA, 10V	4.5V @ 250µA	60nC @ 10V	±20V	2845pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP26P20P	IXYS	MOSFET P-CH 200V 26A TO-220	в производстве	P-Channel	MOSFET (Metal Oxide)	200V	26A (Tc)	10V	170 mOhm @ 13A, 10V	4V @ 250µA	56nC @ 10V	±20V	2740pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP6N50D2	IXYS	MOSFET N-CH 500V 6A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	6A (Tc)	-	500 mOhm @ 3A, 0V	-	96nC @ 5V	±20V	2800pF @ 25V	Depletion Mode	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTH76P10T	IXYS	MOSFET P-CH 100V 76A TO-247	в производстве	P-Channel	MOSFET (Metal Oxide)	100V	76A (Tc)	10V	25 mOhm @ 500mA, 10V	4V @ 250µA	197nC @ 10V	±15V	13700pF @ 25V	-	298W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTA6N50D2	IXYS	MOSFET N-CH 500V 6A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	6A (Tc)	-	500 mOhm @ 3A, 0V	-	96nC @ 5V	±20V	2800pF @ 25V	Depletion Mode	300W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXTA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTH96P085T	IXYS	MOSFET P-CH 85V 96A TO-247	в производстве	P-Channel	MOSFET (Metal Oxide)	85V	96A (Tc)	10V	13 mOhm @ 500mA, 10V	4V @ 250µA	180nC @ 10V	±15V	13100pF @ 25V	-	298W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH6N100D2	IXYS	MOSFET N-CH 1000V 6A TO247	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	6A (Tc)	-	2.2 Ohm @ 3A, 0V	-	95nC @ 5V	±20V	2650pF @ 25V	Depletion Mode	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFP80N25X3	IXYS	MOSFET N-CH 250V 80A TO220AB	в производстве	N-Channel	MOSFET (Metal Oxide)	250V	80A (Tc)	10V	16 mOhm @ 40A, 10V	4.5V @ 1.5mA	83nC @ 10V	±20V	5430pF @ 25V	-	390W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB (IXFP)	TO-220-3
IXTH110N25T	IXYS	MOSFET N-CH 250V 110A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	250V	110A (Tc)	10V	24 mOhm @ 55A, 10V	4.5V @ 1mA	157nC @ 10V	±20V	9400pF @ 25V	-	694W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFA4N100Q	IXYS	MOSFET N-CH 1000V 4A TO-263	в производстве	N-Channel	MOSFET (Metal Oxide)	1000V	4A (Tc)	10V	3 Ohm @ 2A, 10V	4.5V @ 1.5mA	39nC @ 10V	±20V	1050pF @ 25V	-	150W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXFA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFQ60N50P3	IXYS	MOSFET N-CH 500V 60A TO3P	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	60A (Tc)	10V	100 mOhm @ 30A, 10V	5V @ 4mA	96nC @ 10V	±30V	6250pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFA6N120P	IXYS	MOSFET N-CH 1200V 6A D2PAK	в производстве	N-Channel	MOSFET (Metal Oxide)	1200V	6A (Tc)	10V	2.4 Ohm @ 500mA, 10V	5V @ 1mA	92nC @ 10V	±30V	2830pF @ 25V	-	250W (Tc)	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263 (IXFA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFH36N50P	IXYS	MOSFET N-CH 500V 36A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	36A (Tc)	10V	170 mOhm @ 500mA, 10V	5V @ 4mA	93nC @ 10V	±30V	5500pF @ 25V	-	540W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH48P20P	IXYS	MOSFET P-CH 200V 48A TO-247	в производстве	P-Channel	MOSFET (Metal Oxide)	200V	48A (Tc)	10V	85 mOhm @ 500mA, 10V	4.5V @ 250µA	103nC @ 10V	±20V	5400pF @ 25V	-	462W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH16P60P	IXYS	MOSFET P-CH 600V 16A TO-247	в производстве	P-Channel	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	720 mOhm @ 500mA, 10V	4.5V @ 250µA	92nC @ 10V	±20V	5120pF @ 25V	-	460W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH21N50	IXYS	MOSFET N-CH 500V 21A TO-247	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	250 mOhm @ 10.5A, 10V	4V @ 250µA	190nC @ 10V	±20V	4200pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH10P60	IXYS	MOSFET P-CH 600V 10A TO-247AD	в производстве	P-Channel	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	1 Ohm @ 5A, 10V	5V @ 250µA	160nC @ 10V	±20V	4700pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFH24N50	IXYS	MOSFET N-CH 500V 24A TO-247AD	в производстве	N-Channel	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	230 mOhm @ 12A, 10V	4V @ 4mA	160nC @ 10V	±20V	4200pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH40N30	IXYS	MOSFET N-CH 300V 40A TO-247AD	в производстве	N-Channel	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	85 mOhm @ 500mA, 10V	4V @ 4mA	200nC @ 10V	±20V	4800pF @ 25V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3

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