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STMicroelectronics |
MOSFET N-CH 300V 53A D2PAK |
в производстве | N-Channel | MOSFET (Metal Oxide) | 300V | 53A (Tc) | 10V | 40 mOhm @ 26.5A, 10V | 5V @ 250µA | 95nC @ 10V | ±25V | 4240pF @ 100V | - | 250W (Tc) | 150°C (TJ) | SMD Поверхностный монтаж | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 200V 40A TO-220FP |
в производстве | N-Channel | MOSFET (Metal Oxide) | 200V | 40A (Tc) | 10V | 45 mOhm @ 20A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 2500pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 1500V 2.5A TO3PF |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1500V | 2.5A (Tc) | 10V | 9 Ohm @ 1.3A, 10V | 5V @ 250µA | 29.3nC @ 10V | ±30V | 939pF @ 25V | - | 63W (Tc) | 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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STMicroelectronics |
MOSFET N-CH 100V 110A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 10.5 mOhm @ 60A, 10V | 4V @ 250µA | 233nC @ 10V | ±20V | 5200pF @ 25V | - | 312W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N CH 500V 22A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 130 mOhm @ 11A, 10V | 4V @ 250µA | 62.5nC @ 10V | ±25V | 1973pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 35A TO247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 78 mOhm @ 19.5A, 10V | 5V @ 250µA | 91nC @ 10V | ±20V | 3375pF @ 100V | - | 210W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1KV 13A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 1000V | 13A (Tc) | 10V | 700 mOhm @ 6.5A, 10V | 4.5V @ 150µA | 266nC @ 10V | ±30V | 6000pF @ 25V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 45A TO-247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 45A (Tc) | 10V | 110 mOhm @ 22.5A, 10V | 5V @ 250µA | 134nC @ 10V | ±30V | 3800pF @ 25V | - | 417W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 500V 110A MAX247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 500V | 110A (Tc) | 10V | 22 mOhm @ 52A, 10V | 4V @ 250µA | 326nC @ 10V | ±25V | 9600pF @ 100V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 130A MAX247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 130A (Tc) | 10V | 17 mOhm @ 65A, 10V | 5V @ 250µA | 363nC @ 10V | ±25V | 15600pF @ 100V | - | 625W (Tc) | 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 138A MAX247 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 650V | 138A (Tc) | 10V | 15 mOhm @ 69A, 10V | 5V @ 250µA | 414nC @ 10V | ±25V | 18500pF @ 100V | - | 625W (Tc) | 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.2A EMT3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 2.5V | 1.2 Ohm @ 100mA, 2.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | EMT3F (SOT-416FL) | SC-89, SOT-490 |
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ON Semiconductor |
MOSFET N-CH 50V 0.2A SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 2.75V, 5V | 3.5 Ohm @ 200mA, 5V | 1.5V @ 1mA | 2.4nC @ 10V | ±20V | 50pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 300MA SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | ±20V | 30pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 300MA SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | ±20V | 30pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-236 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 60V 0.115A SOT-23-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia USA Inc. |
MOSFET N-CH 60V 360MA TO-236AB |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 360mA (Ta) | 10V | 1.6 Ohm @ 300mA, 10V | 1.5V @ 250µA | 0.8nC @ 4.5V | ±20V | 50pF @ 10V | - | 350mW (Ta), 1.14W (Tc) | -55°C ~ 150°C (TA) | SMD Поверхностный монтаж | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 50V 220MA SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 220mA (Ta) | 4.5V, 10V | 3.5 Ohm @ 220mA, 10V | 1.5V @ 1mA | 2.4nC @ 10V | ±20V | 27pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 60V 0.25A SOT-23 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.4 Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 4.2A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.8V, 4.5V | 52 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.2nC @ 4.5V | ±8V | 808pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.1A VMT3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.5 Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±8V | 7.1pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | VMT3 | SOT-723 |
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Diodes Incorporated |
MOSFET P-CH 20V 0.46A SOT-523 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 460mA (Ta) | 1.8V, 4.5V | 700 mOhm @ 350mA, 4.5V | 1V @ 250µA | 0.622nC @ 4.5V | ±6V | 59.76pF @ 16V | - | 270mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-523 | SOT-523 |
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Diodes Incorporated |
MOSFET N-CH 60V 1.6A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 4.5V, 10V | 140 mOhm @ 1.8A, 10V | 3V @ 250µA | 8.6nC @ 10V | ±20V | 315pF @ 40V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 25V 220MA SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 220mA (Ta) | 2.7V, 4.5V | 4 Ohm @ 400mA, 4.5V | 1.06V @ 250µA | 0.7nC @ 4.5V | ±8V | 9.5pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 700MA 3DFN |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 1.2V, 5V | 970 mOhm @ 100mA, 5V | 1V @ 250µA | 500nC @ 4.5V | ±8V | 46.1pF @ 10V | - | 460mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X2-DFN1006-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 20V 1A SOT323 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.8V, 4.5V | 450 mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.74nC @ 4.5V | ±6V | 60.67pF @ 16V | - | 290mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 30V 3.6A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 50 mOhm @ 3.6A, 10V | 2V @ 250µA | 11.2nC @ 10V | ±20V | 495pF @ 15V | - | 770mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 1.3A 3DFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 1.3A (Ta) | 1.5V, 4.5V | 175 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | ±8V | 64.3pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X2-DFN1006-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET P-CH 30V SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 65 mOhm @ 3.8A, 10V | 2.1V @ 250µA | 5.2nC @ 4.5V | ±20V | 563pF @ 25V | - | 1.08W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 50V 500MA SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 500mA (Ta) | 4.5V, 10V | 1.8 Ohm @ 220mA, 10V | 1.5V @ 250µA | 0.8nC @ 10V | ±20V | 40pF @ 10V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 270MA SOT-323 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 270mA (Ta) | 2.5V, 4V | 1.5 Ohm @ 10mA, 4V | 1.5V @ 100µA | 1.3nC @ 5V | ±20V | 33pF @ 5V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-70-3 (SOT323) | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 20V 750MA DFN1006H4 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 750mA (Ta) | 1.8V, 4.5V | 550 mOhm @ 600mA, 4.5V | 900mV @ 250µA | 0.5nC @ 4.5V | ±12V | 36pF @ 16V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X2-DFN1006-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 20V 230MA DFN |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 230mA (Ta) | 1.5V, 4.5V | 3 Ohm @ 100mA, 4.5V | 1.1V @ 250µA | - | ±10V | 14.1pF @ 15V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | X2-DFN1006-3 | 3-XFDFN |
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ON Semiconductor |
MOSFET N-CH 50V 0.21A SOT323 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 210mA (Ta) | 4.5V, 10V | 3.5 Ohm @ 220mA, 10V | 1.5V @ 1mA | 1.1nC @ 10V | ±20V | 38pF @ 25V | - | 340mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-323 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 60V 280MA SOT-323 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 4.5V, 10V | 3.5 Ohm @ 200mA, 10V | 1.4V @ 26µA | 1.5nC @ 10V | ±20V | 43pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | PG-SOT323-3 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 60V 1.6A SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 4.5V, 10V | 140 mOhm @ 1.8A, 10V | 3V @ 250µA | 8.6nC @ 10V | ±20V | 315pF @ 40V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 25V 120MA SOT-23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 25V | 120mA (Ta) | 2.7V, 4.5V | 10 Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 0.31nC @ 4.5V | ±8V | 11pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 0.154A SOT-416 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 154mA (Tj) | 2.5V, 4.5V | 7 Ohm @ 154mA, 4.5V | 1.5V @ 100µA | - | ±10V | 20pF @ 5V | - | 300mW (Tj) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-75, SOT-416 | SC-75, SOT-416 |
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Rohm Semiconductor |
MOSFET N-CH 30V .1A SOT416 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 8 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13pF @ 5V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | EMT3 | SC-75, SOT-416 |
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ON Semiconductor |
MOSFET P-CH 25V 460MA SOT-23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 25V | 460mA (Ta) | 2.7V, 4.5V | 1.1 Ohm @ 500mA, 4.5V | 1.5V @ 250µA | 1.5nC @ 4.5V | ±8V | 63pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 25V 680MA SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 25V | 680mA (Ta) | 2.7V, 4.5V | 450 mOhm @ 500mA, 4.5V | 1.5V @ 250µA | 2.3nC @ 4.5V | ±8V | 50pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 50V 200MA SC70-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 10V | 3.5 Ohm @ 220mA, 10V | 1.5V @ 250µA | - | ±20V | 50pF @ 10V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET P-CH 20V 4.2A SOT23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.8V, 4.5V | 52 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.2nC @ 4.5V | ±8V | 808pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V .1A VMT3 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 8 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13pF @ 5V | - | 150mW (Ta) | 150°C (TJ) | SMD Поверхностный монтаж | VMT3 | SOT-723 |
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ON Semiconductor |
MOSFET P-CH 60V 120MA SOT-23 |
в производстве | P-Channel | MOSFET (Metal Oxide) | 60V | 120mA (Ta) | 4.5V, 10V | 10 Ohm @ 500mA, 10V | 3.5V @ 1mA | 2.5nC @ 10V | ±20V | 79pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 5.47A SOT23 |
устарелый | N-Channel | MOSFET (Metal Oxide) | 20V | 5.47A (Ta) | 1.8V, 10V | 29 mOhm @ 6A, 10V | 1.2V @ 250µA | 5.4nC @ 4.5V | ±12V | 434.7pF @ 10V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia USA Inc. |
MOSFET N-CH 20V 1.2A XQFN3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 1.5V, 4.5V | 320 mOhm @ 1.2A, 4.5V | 950mV @ 250µA | 1.4nC @ 4.5V | ±8V | 46pF @ 10V | - | 350mW (Ta), 5.43W (Tc) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | DFN1006B-3 | 3-XFDFN |
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ON Semiconductor |
MOSFET N-CH 20V SC-89-3 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 600mA (Ta) | 1.8V, 4.5V | 300 mOhm @ 600mA, 4.5V | 1.5V @ 250µA | 1.1nC @ 4.5V | ±12V | 60pF @ 10V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-89-3 | SC-89, SOT-490 |
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Diodes Incorporated |
MOSFET N-CH 30V 5.8A SOT-23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 3V, 10V | 28 mOhm @ 5.8A, 10V | 2V @ 250µA | 9.2nC @ 10V | ±20V | 386pF @ 15V | - | 720mW (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V 4.2A SOT23 |
в производстве | N-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 50 mOhm @ 4.2A, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | ±8V | 436pF @ 10V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
